Subbands and excitons in GaAs/Ga1−xAl

Stark shifts and mean lifetimes for AlxGa1−xAs/GaAs single quantum wells

“…In order to overcome this problem the perturbation scheme of Zhu et al . [21] is employed in the present calculation. The scheme is presented in Appendix A.…”

The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells

“…Compared to those in three-dimensional bulk semiconductors, the exciton binding energy and oscillator strength in quantum wells are considerably enhanced due to quantum confinement effect, so excitons in quantum wells are more stable [20][21][22]. The exciton binding energy is also important in the quantitative interpretation of optical properties in the photoluminescence spectra [23][24][25]. The oscillator strength of the excitonic transitions represents the creation rate of excitons [26,27], therefore the calculations of exciton binding energy and oscillator strength in quantum wells are important problems and worth studying.…”