We report the energy shifts in an electric field in a Ga& Al"As graded-gap quantum well (GCJQW) and a novel method to calculate subbands. Our calculations have revealed the dependence of the energy shifts of subbands and excitons on the field direction in GGQW's. The subband dependence of energy shifts under an electric field in GGQW's is diff'erent from that in a square quantum well.

No abstract

The effect of an electric field on the subbands and excitons in a GaAs/Ga1-xAlxAs quantum well is studied by using a finite-potential-barrier model. The subbands of electrons and holes and the binding energies of excitons have been calculated for GaAs/Al0.34 Ga0.66 As quantum well (L = 105?) in electric field ranging from O to 1.2×105 V/cm. Based on these, the electron-hole overlap functions and the energy shifts of excitons corresponding to different subbands are obtained, they agree well with experimental results.

No abstract