Subelectron read noise at MHz pixel rates

Mackay, Craig D.; Tubbs, Robert N.; Bell, Ray; Burt, David; Jerram, Paul; Moody, Ian

doi:10.1117/12.426988

Cited by 102 publications

(61 citation statements)

References 3 publications

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“…Jerram et al [2] and Mackay et al [9] outlined the operation of the EMCCDs studied here, and a CCD described by Hynecek [4] follows a similar principle. A detailed description of the EMCCDs tested is included in this section for clarity.…”

Section: Principle Of Emccd Operationmentioning

confidence: 99%

The noise performance of electron multiplying charge-coupled devices

Robbins

Hadwen

2003

IEEE Trans. Electron Devices

289

178

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Abstract-Electron multiplying charge-coupled devices (EMCCDs) enable imaging with subelectron noise up to video frame rates and beyond, providing the multiplication gain is sufficiently high. The ultra-low noise, high resolution, high-quantum efficiency, and robustness to over exposure make these sensors ideally suited to applications traditionally served by image intensifiers. One important performance parameter of such low-light imaging systems is the noise introduced by the gain process. This work investigates the noise introduced by the electron multiplication within the EMCCD. The theory and measurements of the excess noise factor are presented. The measurement technique for determining the excess noise factor is described in detail. The results show that the noise performance matches that of the ideal staircase avalanche photodiode. A Monte Carlo method for simulating the low-light level images is demonstrated and the results compared with practical experience.Index Terms-Charge-coupled devices (CCD), image intensifiers, low-light level imaging, noise, photon counting, single photon detection.

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Section: Principle Of Emccd Operationmentioning

confidence: 99%

The noise performance of electron multiplying charge-coupled devices

Robbins

Hadwen

2003

IEEE Trans. Electron Devices

289

178

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“…In this regard, a new development by Marconi may be interesting (Mackay et al, 2001). They have produced a kind of "photon-counting" CCD, which implements on-chip avalanche gain stages in order to amplify single electrons into large signals.…”

Section: 54mentioning

confidence: 99%

Optical interferometry in astronomy

2003

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Abstract. Here I review the current state of the field of optical stellar interferometry, concentrating on ground-based work although a brief report of space interferometry missions is included. We pause both to reflect on decades of immense progress in the field as well as to prepare for a new generation of large interferometers just now being commissioned (most notably, the CHARA, Keck and VLT Interferometers). First, this review summarizes the basic principles behind stellar interferometry needed by the lay-physicist and general astronomer to understand the scientific potential as well as technical challenges of interferometry. Next, the basic design principles of practical interferometers are discussed, using the experience of past and existing facilities to illustrate important points. Here there is significant discussion of current trends in the field, including the new facilities under construction and advanced technologies being debuted. This decade has seen the influence of stellar interferometry extend beyond classical regimes of stellar diameters and binary orbits to new areas such as mapping the accretion disks around young stars, novel calibration of the Cepheid Period-Luminosity relation, and imaging of stellar surfaces. The third section is devoted to the major scientific results from interferometry, grouped into natural categories reflecting these current developments. Lastly, I consider the future of interferometry, highlighting the kinds of new science promised by the interferometers coming on-line in the next few years. I also discuss the longer-term future of optical interferometry, including the prospects for space interferometry and the possibilities of large-scale ground-based projects. Critical technological developments are still needed to make these projects attractive and affordable. †

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“…This results in a reduction in effective system read noise, [1,2]. Its design is similar to that of an ordinary CCD, see figure 1, but for additional register elements after the serial register.…”

Section: Introductionmentioning

confidence: 86%

“…Values for p depend on the accelerating voltage and are a maximum in the region of 1% [2] for a 45 V potential.…”

Section: Introductionmentioning

confidence: 99%

Novel method for identifying the cause of inherent ageing in Electron Multiplying Charge Coupled Devices

et al. 2012

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The charge multiplication process used in the Electron Multiplying CCD (EMCCD) is subject to an ageing effect in which the gain achieved at particular avalanche potentials, gradually decreases during operation. To utilise these devices for both space and terrestrial applications where recalibration of the gain is not feasible, a comprehensive understanding of the ageing process is required.A custom automated test equipment (ATE) has been produced and used to develop the techniques required for investigating the ageing process alongside the verification of simulation work on the subject. Simulation work carried out by e2v technologies has suggested hole build-up at the Si/Si0 2 interface below one of the transfer gates. This build up of holes has now been linked with a reduction in avalanche potential in the device. A novel experimental technique has therefore been developed to determine the actual potentials within the device and thereby determine the validity of this prediction.The initial results tend to support simulation as an increase in the potential beneath one of the phases is observed.

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Subelectron read noise at MHz pixel rates

Cited by 102 publications

References 3 publications

The noise performance of electron multiplying charge-coupled devices

The noise performance of electron multiplying charge-coupled devices

Optical interferometry in astronomy

Novel method for identifying the cause of inherent ageing in Electron Multiplying Charge Coupled Devices

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