1983
DOI: 10.1103/physrevb.27.6739
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Subharmonic energy-gap structure in superconducting constrictions

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Cited by 481 publications
(468 citation statements)
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“…We show that the junction noise corresponds to the thermal noise of a non-linear resistor 4kBT /R with R = V /I(V ) and no adjustable parameters. The charge transport in a diffusive superconductornormal metal -superconductor (S-N-S) junction occurs mainly through multiple Andreev reflections (MAR) [1]: normal metal quasiparticles with an energy ǫ < ∆ go through successive Andreev reflections at the two N-S interfaces until they reach the superconducting gap energy ∆. In one Andreev reflection, an incident electron (hole) is retro-reflected as a hole (electron).…”
mentioning
confidence: 99%
“…We show that the junction noise corresponds to the thermal noise of a non-linear resistor 4kBT /R with R = V /I(V ) and no adjustable parameters. The charge transport in a diffusive superconductornormal metal -superconductor (S-N-S) junction occurs mainly through multiple Andreev reflections (MAR) [1]: normal metal quasiparticles with an energy ǫ < ∆ go through successive Andreev reflections at the two N-S interfaces until they reach the superconducting gap energy ∆. In one Andreev reflection, an incident electron (hole) is retro-reflected as a hole (electron).…”
mentioning
confidence: 99%
“…At the first step we neglect the proximity effect change of the junction resistance and take D ± = 1 everywhere in the normal layer. Then, I e(h) = σ 1 ∇n e(h) , △n e(h) = 0 and therefore 13) where…”
Section: Conductance Renormalization Proceduresmentioning
confidence: 99%
“…Electronic transport in these systems is mediated by Andreev conversion of a supercurrent into a current of quasiparticles and vice versa at interfaces between the superconducting and normal regions [1]. A fascinating phenomenon benchmarking this mechanism is the enhancement of the conductivity observed in a single SNS junction at matching voltages constituting an integer (m) fraction of the superconducting gap, V = 2∆/(em) [2][3][4][5][6][7][8][9][10][11] due to the effect of multiple Andreev reflection (MAR) [12][13][14]. The currentvoltage characteristics of diffusive SNS junctions were discussed in great detail in Refs.…”
Section: Introductionmentioning
confidence: 99%
“…The AR process has been studied in ballistic and diffusive SNS junctions using metal, the two-dimensional electron gas (2DEG) of semiconductor heterostuctures (Hoss et. al.,2000;Nitta et al,1994;Octavio et. al.,1983), carbon nanotubes (Bezuglyi et.…”
Section: Introductionmentioning
confidence: 99%