2018
DOI: 10.1049/iet-cdt.2018.5123
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SUBHDIP: process variations tolerant subthreshold Darlington pair‐based NBTI sensor circuit

Abstract: Aggressive technology scaling has inevitably led to reliability becomes a major concern for modern high-speed and high-performance integrated circuits. The major reliability concerns in nanoscale very-large-scale integration design are the time-dependent negative bias temperature instability (NBTI) degradation. Owing to increasing vertical oxide field and higher operating temperature, the threshold voltage of P-channel MOS transistors increases with time under NBTI. This study presents a novel subthreshold Dar… Show more

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Cited by 6 publications
(5 citation statements)
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References 26 publications
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“…The V out is a function of the output resistance and trans-conductance of the transistors. The sensitivity of the proposed sensor defined by the ratio of the change in output to the change in input as s = ∆V out /∆I in , has the value of 0.4 mV/nA which is much higher than the sensitivity of the SUBHDIP sensor [20]. The input resistance in the proposed circuit is very high due to the presence of the gate oxide and a diode-connected transistor.…”
Section: Out I Ddqmentioning
confidence: 94%
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“…The V out is a function of the output resistance and trans-conductance of the transistors. The sensitivity of the proposed sensor defined by the ratio of the change in output to the change in input as s = ∆V out /∆I in , has the value of 0.4 mV/nA which is much higher than the sensitivity of the SUBHDIP sensor [20]. The input resistance in the proposed circuit is very high due to the presence of the gate oxide and a diode-connected transistor.…”
Section: Out I Ddqmentioning
confidence: 94%
“…In order to demonstrate the effect of process variation on the proposed sensor, 5000 Monte Carlo simulations were performed to show the variation in the threshold voltage. The Simulation result is shown in Figure 10 which shows that the mean value µ and the standard deviation (SD) σ of the output voltage are smaller than those of the outputs generated by the state-of-the-art designs [20]. Input Current(A)…”
Section: Proposed Stress Measurement Sensormentioning
confidence: 97%
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“…Meanwhile, the aging sensors that were proposed by A. Amouri et al [27] place the aging sensor in a critical path to avoid late transitions occurring in the circuit. The aging sensor [28,29] and FPGA chips were reprogrammed to reduce the late transition effects caused by NBTI [30] and hot carrier injection (HCI). Meanwhile, M. Valdes-Pena proposed an aging sensor without determining a specific delay range [31].…”
Section: Lifetime Reliability Sensing In Fpgasmentioning
confidence: 99%
“…Tabular analysis (Table 1) of the results obtained by [9] reveals that:(a) the shift in threshold voltage (V th ) and drain current (I dd ) is a function of high temperature and is observed to increase for V th and decrease for I dd at temperatures ≥ 60 • C, (b) an approximate rise of 4% in the threshold voltage shift is evident with the scaling down of technology nodes [44]. The rate of decrease in I dd is, however, less than the rate of V th increase, and (c) eventually, the propagation delays increase with the aforementioned trends of variation in V th and I dd .…”
Section: A Design Considerationsmentioning
confidence: 99%