2008
DOI: 10.1109/csics.2008.28
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Submicron InP DHBT Technology for High-Speed High-Swing Mixed-Signal ICs

Abstract: Abstract-We report on the development of a submicron InP DHBT technology, optimized for the fabrication of ≥50-GHzclock mixed-signal ICs. In-depth study of device geometry and structure has allowed to get the needed performances and yield. Special attention has been paid to critical thermal behavior. Various size submicron devices have been modeled using UCSD-HBT equations. These large signal models have allowed the design of 50-GHz clocked 50G Decision and 100G Selector circuits. The high quality of the measu… Show more

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Cited by 64 publications
(26 citation statements)
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“…The device technology features a hexagonal emitter with a drawn width of 0.7 lm and targets high-swing mixed-signal ICs for operation speed at 100 Gbit/s and above [11]. Multifinger devices with breakdown voltage of BV ceo >4.75 V are available for power applications.…”
Section: Inp Dhbt Technologymentioning
confidence: 99%
“…The device technology features a hexagonal emitter with a drawn width of 0.7 lm and targets high-swing mixed-signal ICs for operation speed at 100 Gbit/s and above [11]. Multifinger devices with breakdown voltage of BV ceo >4.75 V are available for power applications.…”
Section: Inp Dhbt Technologymentioning
confidence: 99%
“…1 and the layer structure is listed in Table I is 300/400 GHz. Compared with early reported 0.5 µm InP DHBT [13,14,15,16], this process have some high frequency performance improvement. The process provides three wiring metal layers and compact interconnect vias between them.…”
Section: Processmentioning
confidence: 99%
“…Fig. 2 Microphotograph of driver IC InP DHBT technology: The IC was fabricated in the InP DHBT technology available in III-V Lab [5]. This process was performed on epilayers grown by GSMBE on 3-inch wafers with a carbon-doped base.…”
mentioning
confidence: 99%