2019 IEEE 69th Electronic Components and Technology Conference (ECTC) 2019
DOI: 10.1109/ectc.2019.00022
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Submicron-Scale Cu RDL Pattering Based on Semi-Additive Process for Heterogeneous Integration

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Cited by 10 publications
(2 citation statements)
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“…A competitive alternative to SAP [4] and LELE [5] for N+3 node is a combination of material, process and tool development: a grey-tone dual damascene optimization of PIDs with a maskless computation architecture for submicron printing called Digital Lithography Technology or DLT. This lithography technology (Figure 4) is particularly suitable for packaging as it is scalable with highest resolution at production throughput and overlay performance, and modular with patterning capabilities on all substrate materials and sizes.…”
Section: Discussionmentioning
confidence: 99%
“…A competitive alternative to SAP [4] and LELE [5] for N+3 node is a combination of material, process and tool development: a grey-tone dual damascene optimization of PIDs with a maskless computation architecture for submicron printing called Digital Lithography Technology or DLT. This lithography technology (Figure 4) is particularly suitable for packaging as it is scalable with highest resolution at production throughput and overlay performance, and modular with patterning capabilities on all substrate materials and sizes.…”
Section: Discussionmentioning
confidence: 99%
“…These techniques narrow the RDL trace width/pitch to as small as two microns [ 11 , 12 ] and even sub-microns [ 13 ]. To enhance the electricity transmission capacity, traces become thicker, with an aspect ratio of up to 4.2 [ 14 ], which is very different from traditional shell-like thin traces. Furthermore, wafer-level integrations can stack up to five metal layers [ 1 ], with an area up to 1200 mm 2 [ 15 ] or even as extensive as 2500 mm 2 [ 1 ].…”
Section: Introductionmentioning
confidence: 99%