Submicron selective organometallic vapor phase epitaxy growth using tunable deep UV excitation

Wankerl, Andreas; Emerson, David R.; Shealy, J. R.

doi:10.1063/1.121130

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…Wankerl and co-authors demonstrated selective area growth of Al x Ga 1−x As mesas from trimethylgallium (TMG), trimethylaluminum (TMA) and arsine gases at 500 °C using a tunable, frequency doubled dye laser [90]. They achieved a growth rate differential between dark and illuminated growth regions of 1:3.2, averaging a growth rate of 2.6 µm in the illuminated area over the first 15 min of growth.…”

Section: Molecular Decomposition and Increased Growth Ratesmentioning

confidence: 99%

“…89 They achieved a growth rate differential between dark and illuminated growth regions of 1:3.2, averaging a growth rate of 2.6 μm in the illuminated area over the first 15 minutes of growth. The growth rate differential depended strongly on the excitation wavelength, with selectivity dropping to near zero abruptly at wavelengths above 250 nm.…”

Section: Molecular Decomposition and Increased Growth Ratesmentioning

confidence: 99%

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Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Alberi¹,

Scarpulla²

2017

J. Phys. D: Appl. Phys.

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Herein we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors. We concentrate on mechanisms producing measureable, utilizable changes in crystalline perfection, phase, composition, doping, and defect distribution. We outline the relevant physics of different mechanisms, concentrating on those yielding effects orthogonal to the primary growth variables of temperature and atomic or molecular fluxes and document the phenomenological effects reported.Based on experimental observations from a range of semiconductor systems and growth conditions, the primary effects include enhanced anion desorption, molecular dissociation, increased doping efficiency, modification to defect populations and improvements to the crystalline quality of epilayers grown at low temperatures. Future research directions and technological applications are also discussed.2

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Section: Molecular Decomposition and Increased Growth Ratesmentioning

confidence: 99%

Section: Molecular Decomposition and Increased Growth Ratesmentioning

confidence: 99%

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Alberi¹,

Scarpulla²

2017

J. Phys. D: Appl. Phys.

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Laser stimulated selective area growth of quantum dots

Wankerl

Schremer

Shealy

1998

Applied Physics Letters

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We report on the selective area growth of InAs quantum dots on GaAs by ultraviolet (UV) laser stimulated organometallic vapor phase epitaxy. At the low substrate temperature of 435 °C, exposure to a 248.2 nm continuous wave laser beam enhances the InAs growth rate by approximately 30%, causing the transition from two-dimensional (2D) to 3D growth mode to occur in the laser stimulated region only. Photoluminescence spectra from the UV laser stimulated growth region show both wetting layer and quantum dot luminescence, whereas only the wetting layer peak is present in the spectra from the dark grown regions. A photoluminescence map shows good spatial agreement between the region exhibiting quantum dot luminescence and the UV stimulated spot size. Since no quantum dot peak shifts are detected, but the luminescence intensity increases towards the center of the region stimulated with the Gaussian UV beam, we conclude that the island density rather than island size distribution is influenced by the UV intensity.

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Effects of in-situ surface modification by pulsed laser on InAs/GaAs (001) quantum dot growth

Zhang¹,

石震武²,

霍大云³

et al. 2016

Acta Phys. Sin.

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InAs/GaAs quantum dots (QDs) have been extensively applied to high-performance optoelectronic devices due to their unique physical properties. In order to exploit the potential advantages of these QD-devices, it is necessary to control the QDs in density, uniformity and nucleation sites. In this work, a novel research of in-situ pulsed laser modifying InAs wetting layer is carried out to explore a new controllable method of growing InAs/GaAs(001) QDs based on a specially designed molecular beam epitaxy (MBE) system equipped with laser viewports. Firstly, a 300 nm GaAs buffer layer is grown on GaAs (001) substrate at 580 ℃ and the temperature decreases to 480 ℃ to deposit InAs. As soon as the amount of InAs deposition reaches 0.9 ML, a single laser pulse ( =355 nm, pulse duration ～ 10 ns) with an energy intensity of ～ 40.5 mJ/cm2 is in-situ introduced to irradiate the surface. Then, the sample is taken out and then its surface modification is immediately evaluated by atomic force microscope measurement. Atomic layer removal nano-holes elongated in the direction, and a surface density of ～2.0109 cm-2 are observed on the wetting layer. We attribute the morphology change to being due to laser-induced atom desorption. Because indium atoms should be easily desorbed away at substrate temperature of 480 ℃ during the laser irradiation, some vacancy defects are created. Then atoms adjacent to those defects would become weakly bounded, resulting in preferential desorption around the defect sites in sequence. Therefore, atomic layer removal is intensified by such a kind of chain effect and finally nano-holes are developed on the surface. In order to make clear how these nano holes of special kind influence the InAs/GaAs (001) QD growth, we perform another study by continuously depositing the InAs after the irradiation at the same thickness of 0.9 ML. It is found that when 1.7 ML InAs is deposited, QDs start to nucleate into some nano-holes and then are further deposited with an InAs coverage of 1.9 MLs, all the nano holes would be completely nucleated by QDs with a good uniformity, and there are no QDs in the remaining area. Such an effect of QD preferential nucleation in nano-holes could be explained by the following two causes. Firstly, adsorbed indium atoms tend to immigrate into nano-holes for lower surface energy induced by the concave surface curvature. The enhanced accumulation of Indium is in favor of the preferential nucleation of QDs in nano-holes. On the other hand, QD growth in areas outside the nano holes is depressed for indium desorption in pulsed laser irradiation process. In conclusion, our studies of in-situ laser-induced surface modification reported here provide a potential solution of controllable InAs/GaAs (001) QD growth.

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Submicron selective organometallic vapor phase epitaxy growth using tunable deep UV excitation

Cited by 3 publications

References 15 publications

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

Laser stimulated selective area growth of quantum dots

Effects of in-situ surface modification by pulsed laser on InAs/GaAs (001) quantum dot growth

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