2015
DOI: 10.1186/s11671-015-1104-z
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Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range

Abstract: The spatial uniformity of GaSb-and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy… Show more

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Cited by 10 publications
(4 citation statements)
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“…Although InGaAs/InAlAs QW heterostructures possess special advantages for applications in long-wavelength and high-speed optoelectronic devices, they are very sensitive to alloy and interface fluctuations which can strongly affect the optical properties and performance of any resulting devices [2325]. It is very necessary to acquire more detailed experimental data in order to precisely control the optical properties of the InGaAs/InAlAs QW heterostructures.…”
Section: Introductionmentioning
confidence: 99%
“…Although InGaAs/InAlAs QW heterostructures possess special advantages for applications in long-wavelength and high-speed optoelectronic devices, they are very sensitive to alloy and interface fluctuations which can strongly affect the optical properties and performance of any resulting devices [2325]. It is very necessary to acquire more detailed experimental data in order to precisely control the optical properties of the InGaAs/InAlAs QW heterostructures.…”
Section: Introductionmentioning
confidence: 99%
“…reaching the long-wavelength infrared region. This might be considered as an important factor in the case of emitters in the LWIR spectral range where reduction of the fundamental transition by 10 meV allows obtaining hundreds of nanometers shift in the emitted wavelength (Dyksik et al 2015).…”
mentioning
confidence: 99%
“…Phase-sensitive detection of optical response was performed using a lock-in amplifier. A similar FT-based approach has been demonstrated as an efficient tool for optical characterization of narrow-band gap materials in the mid-infrared spectral range [21][22][23][24][25].…”
Section: Methodsmentioning
confidence: 99%