2015
DOI: 10.1116/1.4919925
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Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

Abstract: Etching characteristics of tantalum (Ta) masks used in magnetoresistive random-access memory etching processes by carbon monoxide and ammonium (CO/NH3) or methanol (CH3OH) plasmas have been examined by mass-selected ion beam experiments with in-situ surface analyses. It has been suggested in earlier studies that etching of magnetic materials, i.e., Fe, Ni, Co, and their alloys, by such plasmas is mostly due to physical sputtering and etch selectivity of the process arises from etch resistance (i.e., low-sputte… Show more

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Cited by 26 publications
(21 citation statements)
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References 31 publications
(22 reference statements)
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“…The Ta 4f high-resolution spectrum contains three pairs of Ta 4f double peaks belonging to three chemical states of tantalum, shown in Figure 7b. The Ta 4f 7/2 peaks associated with Ta 4+ (TaO 2 ), Ta 3+ (Ta 2 O 3 ), and Ta 2+ (TaO) are located at 24.4 eV, 24 eV, 23.6 eV respectively, and the spin-orbit splitting of Ta 4f 7/2 to Ta 4f 5/2 is 1.8ev, agrees with reported values [59,60,61]. The value state of Ta is related to the concentration of oxygen and the temperature during or after oxidation.…”
Section: Resultssupporting
confidence: 91%
“…The Ta 4f high-resolution spectrum contains three pairs of Ta 4f double peaks belonging to three chemical states of tantalum, shown in Figure 7b. The Ta 4f 7/2 peaks associated with Ta 4+ (TaO 2 ), Ta 3+ (Ta 2 O 3 ), and Ta 2+ (TaO) are located at 24.4 eV, 24 eV, 23.6 eV respectively, and the spin-orbit splitting of Ta 4f 7/2 to Ta 4f 5/2 is 1.8ev, agrees with reported values [59,60,61]. The value state of Ta is related to the concentration of oxygen and the temperature during or after oxidation.…”
Section: Resultssupporting
confidence: 91%
“…2 of Ref. 24, although they are represented here as the etching rates rather than the sputtering yields given in Ref. 24.…”
Section: Resultsmentioning
confidence: 99%
“…[21][22][23] A previous study of Ref. 24 shows that the sputtering yield of Ta by energetic CO þ ions strongly depends on the ion irradiation angle and suggests that the strong angular dependence may be caused by angular dependence of surface oxidation.…”
Section: Introductionmentioning
confidence: 95%
“…The etching of metals also has the problem of the redeposition of etching by-products. 12,[188][189][190][191][192][193][194][195][196][197] In self-limiting formation, another difficulty arises for intermetallic compounds or alloys such as CoFe, NiFe, CrFe, and PtMn. Simply, in etching processes for compounds such as high-k materials, dichalcogenides, GaAs, GaP, and GaN, it is difficult to maintain the surface stoichiometry during and after the etching.…”
Section: Future Challengesmentioning
confidence: 99%