Substituted arsines as As sources in MOMBE

Musolf, J.; Weyers, M.; Balk, P.; Zimmer, Manuel; Hofmann, H.J.

doi:10.1016/0022-0248(90)90374-t

Cited by 29 publications

(2 citation statements)

References 16 publications

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“…In addition to the problems of safety, the relatively high thermal stability of AsH 3 and PH 3 can be detrimental, since growth at low temperatures ͑р550°C͒ or very low pressures 1-6 ͑р10 Ϫ3 Torr͒ requires precracking of these hydrides in order for group V incorporation to occur. While trisdimethylaminoarsenic 7 ͑DMAAs͒ and to a lesser extent phenylarsine 8,9 ͑PhAsH 2 ͒ and tertiarybutylarsine 9 ͑TBAsH 2 ͒ have successfully been used without precracking for growth of GaAs and AlGaAs, similar results have not been obtained for InP or GaP growth from PH 3 alternatives. 2,3 The need for hightemperature cells limits the ultimate scalability of the process, and also adds additional complications to the growth system.…”

Section: Introductionmentioning

confidence: 99%

Novel phosphorus and antimony sources for use in metalorganic molecular beam epitaxy

Abernathy

Bohling

Muhr

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inOperational experience with a valved antimony cracker source for use in molecular beam epitaxy Growth of InGaP by metalorganic molecular beam epitaxy using novel Ga sources Trisdimethylaminoarsenic and phenylarsine have proven to be useful replacements for AsH 3 for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy. This paper will discuss the P analogs, namely, trisdimethylaminophosphorus ͑DMAP͒ and phenylphosphine ͑PhPH 2 ͒, as well as trisdimethylaminoantimony ͑DMASb͒. All of these sources decomposed readily at the growth surface without precracking. InP surfaces were maintained with each source over a wide range, 375-525°C, as were GaAs substrates over the range of 375-600°C. Using DMAP, GaP was grown at rates up to 200 Å/min with slightly less carbon contamination than obtained with similar flows of PH 3 . When trimethylindium ͑TMI͒ or elemental In was introduced, however, neither the DMAP nor the PhPH 2 readily decomposed, thus leaving In droplets on the surface. InP was successfully grown by thermally cracking these compounds prior to injection to the chamber. The dependence of cracking efficiency and impurity uptake on cracker temperature will also be presented. DMASb was found to produce just the opposite effect of DMAP, apparently preventing the adsorption of triethylgallium, tri-isobutylgallium, or trimethylaminealane on the surface for sufficient time to allow decomposition and hence growth to occur.

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Section: Introductionmentioning

confidence: 99%

Novel phosphorus and antimony sources for use in metalorganic molecular beam epitaxy

Abernathy

Bohling

Muhr

et al. 1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The observed GaAs growth was attributed to the thermal decomposition of AsH 3 by radiation from the sample heater. Furthermore, they later concluded that it is not possible to grow GaAs using this technique because cracking of AsH 3 into arsenic at the substrate surface alone is negligible and thus not sufficient for achieving growth [6]- [8].…”

Section: Introductionmentioning

confidence: 99%

Growth of GaAs by Chemical Beam Epitaxy Using Unprecracked Arsine and Trimethylgallium

Park¹,

Ro²,

Sim³

et al. 1994

ETRI J

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Undoped GaAs has been successfully grown by chemical beam epitaxy (CBE) via surface decomposition process using arsine (AsH3) and trimethylgallium (TMG). Three distinct regions of temperature‐dependent growth rates were identified in the range of temperatures from 570 to 690°C. The growth rates were found strongly dependent on the V/III ratio between 5 and 30. The growth rate at low V/III ratio seems to be determined by arsenic produced on the surface, whereas at high V/III ratio it shows dependence on the adsorption of TMG. Hall measurement and photoluminescence (PL) analysis show that the films are all p‐type and that carbon impurities are primarily responsible for the background doping. Carbon concentrations have been found to be reduced by two orders of magnitude as compared to those of epilayers grown by CBE which employs TMG and arsenic obtained from precracked AsH3 in a high temperature cell. It was also found that hydrogen atoms dissociated from unprecracked AsH3 play an important role in removing hydrocarbon‐containing species resulting in a significant reduction of carbon impurities.

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Metalorganic Precursors for Chemical Beam Epitaxy

Jones¹,

O’Brien

1997

CVD of Compound Semiconductors

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Substituted arsines as As sources in MOMBE

Cited by 29 publications

References 16 publications

Novel phosphorus and antimony sources for use in metalorganic molecular beam epitaxy

Novel phosphorus and antimony sources for use in metalorganic molecular beam epitaxy

Growth of GaAs by Chemical Beam Epitaxy Using Unprecracked Arsine and Trimethylgallium

Metalorganic Precursors for Chemical Beam Epitaxy

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