Substitutionally Doped MoSe₂ for High‐Performance Electronics and Optoelectronics

Abstract

characterizations. J.Y. and Z.W. synthesized the MoSe 2 crystals. J.G. conducted the XRD characterizations. B.H. conducted the STEM characterizations under the direction of P.G. X.G. performed the DFT calculations under the direction of X.Z. Q.L. performed the current simulations. J.Y. conducted the AFM experiments. M.P. performed the speed measurements. P.W. performed the spectra experiments. P.W., T.H., and M.Z. assisted in analyzing experiments. All authors discussed the results and revised the manuscript.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

“…419,420 As mentioned in Section 4.2.1, the band alignments of vertical TMD heterostructures are effectively modulated by perpendicular electric fields, and thus phototransistors can be operated by gate voltages, which are called writing voltages here. At different applied gate voltages, BTBT currents are transformed due to the band inclination to different degrees, 421,422 while the major carrier types in dipolar semiconducting TMDs (e.g., H phase MoTe 2 and WSe 2 ) also change. 423,424 Besides an electric field, strains that are perpendicular to vertical heterointerfaces can also enable a piezo-photo response due to the strain-induced incline band structures of TMDs.…”

Infrared Photodetection from 2D/3D van der Waals Heterostructures

“…As seen in Figure 2 e, with the increase of Ta doping concentration, the conduction type of MoSe 2 changes from N-type to P-type. A high-performance homojunction photodetector composed of N-type and P-type MoSe 2 are produced with low power consumption [ 53 ].…”

“…( d ) Schematic diagram of conductive type of PtSSe with controllable layer thickness switching by Ar+ plasma etching [ 52 ] (copyright 2021, John Wiley and Sons). ( e ) Schematic diagram of Ta doping to achieve changing of MoSe 2 conduction type [ 53 ] (copyright 2021, John Wiley and Sons).…”

Dative bonding as a mechanism for enhanced catalysis on the surface of MoS2

“…Limited surface interactions also reduce the number of analytes that TMDs can efficiently detect, restricting the application perspectives [32][33][34]. As a result, significant effort has been put into overcoming those limitations, notably employing substitutional doping [35][36][37][38][39]. The latter has been reported effective in enhancing the local chemical activity of TMDs [40,41], which has improved the sensitivity of the sheets [42][43][44][45] and even facilitated the formation of strong chemical bonds at their surface [46][47][48].…”