Substrate bias effect of epitaxial delta-doped channel MOS transistor for low-power applications

A Unified Model of Drain Current Local Variability due to Channel Length Fluctuation for an n-Channel EδDC MOS Transistor

“…An EδDC transistor is a device structure proposed by us which is reported to be a low-power, low-cost transistor, suitable for SoC applications with controlled process variability effects due to random discrete dopant effects [12], [13], [14], [15], [16], [17]. In the present work, we derive a physics based local drain current variability model of an epitaxial delta doped channel MOS (EδDC) transistor, caused due to random fluctuation of channel length, attributed to the LER/LWR phenomenon.…”

“…This leads to the nature of variation of normalized drain current variability even for similar fluctuation σI D over the entire gate bias range. As evident from (16) In the weak inversion mode (WI), the local drain current variability depends upon three factors: the channel length variability, the threshold voltage variability and the correlation factor. Since the channel length variability term is bias independent, the drain bias dependence comes from the remaining two components.…”

A Unified Model of Drain Current Local Variability due to Channel Length Fluctuation for an n-channel Eδ DC MOS Transistor

“…An EδDC transistor is a device structure proposed by us which is reported to be a low-power, low-cost transistor, suitable for SoC applications with controlled process variability effects due to random discrete dopant effects [12], [13], [14], [15], [16], [17]. In the present work, we derive a physics based local drain current variability model of an epitaxial delta doped channel MOS (EδDC) transistor, caused due to random fluctuation of channel length, attributed to the LER/LWR phenomenon.…”

“…The last term in (16) is the correlation coefficient. The current sensitivities are calculated using (12) and (13).…”

“…As evident from (16) In the weak inversion mode (WI), the local drain current variability depends upon three factors: the channel length variability, the threshold voltage variability and the correlation factor. Since the channel length variability term is bias independent, the drain bias dependence comes from the remaining two components.…”