Substrate dependence in the growth of epitaxial Pb1−xLaxTiO3 thin films

Abstract

The metalorganic chemical vapor deposition (MOCVD) technique has been applied to the growth of epitaxial Pb1−xLaxTiO3 (PLT) thin films with x=0.28. By first introducing an initial TiO2 layer, three-dimensional epitaxial PLT films were grown on the (100) surface of MgO substrate. For both KTaO3 (100) and Al2O3 (0001) substrates, heteroepitaxy was achieved without the introduction of TiO2 as the initial, intervening layer between the PLT film and the substrate. On Al2O3 substrates, PLT films with a [111] preferred orientation were grown with a good epitaxial in-plane relationship.

Optical properties of the epitaxial Pb1−xLaxTiO3 thin films grown by metalorganic chemical vapor deposition

“…3,4 The preferred orientations of the epitaxial PLT thin films were ͑100͒ and ͑111͒ for MgO ͑100͒ and Al 2 O 3 ͑0001͒, respectively. The growth conditions and structural properties for PLT thin films were reported elsewhere.…”

“…3 In this letter, we report the optical properties of epitaxial PLT thin films grown by metalorganic chemical vapor deposition ͑MOCVD͒ methods. 3 In this letter, we report the optical properties of epitaxial PLT thin films grown by metalorganic chemical vapor deposition ͑MOCVD͒ methods.…”

Large-scale synthesis of Pb1−La TiO3 ceramic powders by molten salt method

“…In general, these properties of lanthanum doped lead titanate materials mostly depended on the lanthanum concentration and one of the characteristics can be optimized by adjusting the molar ratio of Pb/La [4]. The PLT ceramic powders are conventionally prepared by solid-state reaction [5,6], sol-gel process [7][8][9], chemical precipitation [10], metallo-organic decomposition (MOD) process [11,12], or hydrothermal treatment [13]. In all these methods, calcinations at more or less high temperature are * Corresponding author.…”