2010
DOI: 10.1016/j.diamond.2010.08.012
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Substrate effect on the optical properties and thickness of diamond-like carbon films deposited by the RF PACVD method

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Cited by 38 publications
(16 citation statements)
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“…The effect can be related to a modification of internal structure of the film or to a stress in the films induced by the substrate with the increase of their thickness [29]. The phenomenon remains in contradiction with the variations of n for the films deposited with other CVD methods where the increase of the film thickness is typically followed by an increase of n [30]. Since in other vapor-based thin film deposition methods plasma or high temperature modifies the film during the deposition, in case of the ALD more likely the substrate effect induces a decrease of the n with the film thickness.…”
Section: Resultsmentioning
confidence: 99%
“…The effect can be related to a modification of internal structure of the film or to a stress in the films induced by the substrate with the increase of their thickness [29]. The phenomenon remains in contradiction with the variations of n for the films deposited with other CVD methods where the increase of the film thickness is typically followed by an increase of n [30]. Since in other vapor-based thin film deposition methods plasma or high temperature modifies the film during the deposition, in case of the ALD more likely the substrate effect induces a decrease of the n with the film thickness.…”
Section: Resultsmentioning
confidence: 99%
“…After the cleaning, substrates were fully rinsed and immersed in high-purity dionized water. Horiba Jobin-Yvon UVSEL spectroscopic ellipsometer (Horiba Scientific, Edison New Jersey, NJ, USA) with the wavelength ranging from 250 to 750 nm was used to determine the thickness ( d ) and optical properties of investigated SiN x films, i.e ., their refractive index ( n ) and extinction coefficient ( k ) [26,27]. To fit the measurement data to a physical model, a three-layer model (Si wafer/SiO 2 /SiN x ) was used where a single-layer Tauc-Lorentz dispersion formula [28] of SiN x film was applied and fitted with mean-square error χ 2 < 5.…”
Section: Methodsmentioning
confidence: 99%
“…4. The relationship of (a) n and k over the classification of the deposited amorphous carbon films modified from previous works 14,15,[25][26][27][28] with the wavelength at 550 nm; (b) Tauc-gap E g with E k and E n-max; (c) hydrogen contents with E k and E n-max ; and (d) sp 2 /(sp 2 þ sp 3 ) ratios with E k and E n-max .…”
Section: à4mentioning
confidence: 99%