Substrate-independent catalyst-free synthesis of high-purity Bi2Se3 nanostructures

Abstract

We describe a catalyst-free vapor-solid synthesis of bismuth selenide (Bi 2 Se 3 ) nanostructures at ambient pressure with H 2 as carrier gas. The nanostructures were synthesized on glass, silicon and mica substrates and the method yields a variety of nanostructures: nanowires, nanoribbons, nanoplatelets and nanoflakes. The materials analysis shows high chemical purity in all cases, without sacrificing the crystalline structure of Bi 2 Se 3 . Lowtemperature measurements of the nanostructures indicate contributions from the surface states with a tunable carrier density. Samples synthesized on flexible mica substrates show no significant change in resistance upon bending, indicating robustness of as-grown Bi 2 Se 3 nanostructures and their suitability for device applications.

Vapour-liquid-solid growth of ternary Bi2Se2Te nanowires

“…Secondly, Au particles merely provide nucleation centres that promote precursor deposition but are subsequently buried. This agrees with the possibility of catalyst-free synthesis of Bi 2 Se 3 nanostructures [ 26 ].…”

TEM Nanosculpting of Topological Insulator Bi$_2$Se$_3$

“…These values agree with the known lattice spacing of 0.21 nm for {110} planes of Bi 2 Se 3 . 13 Additionally, splitting appeared in the lower three spots of the pattern in 1(h), which may indicate the lattice planes shifted across a dislocation. However, the darker band stretching from the Tjunction into the body of the flake, shown in Fig.…”

Frank–van der Merwe Growth versus Volmer–Weber Growth in Successive Stacking of a Few‐Layer Bi2Te3/Sb2Te3 by van der Waals Heteroepitaxy: The Critical Roles of Finite Lattice‐Mismatch with Seed Substrates

“…[1][2][3][4][5][6][7][8][9] Recent research on stacked heterostructures of diverse 2D vdw-layered materials, such as graphene, hexagonal boron nitride (h-BN), transition-metal dichalcogenides, and other layered chalcogenides, has called attention to the large-area integration of such 2D units by conventional gas-phase deposition. [18][19][20][21][22][23] However, the effects of the finite lattice-mismatch during wileyonlinelibrary.com the atomic force microscope (AFM) image in Figure 1b. [16,17] This means that the vdw growth habits are not strongly dependent on the choice of the growth substrates in various gas-phase growth methods.…”

“…Typically, vdw heteroepitaxy is characterized by the presence of heterointerfaces formed on a surface free of chemical polarity or dangling bonds, so the coherent epitaxial growth is not strictly affected by strain built up by the in‐plane lattice‐mismatch at the interfaces between the two dissimilar crystal planes . This means that the vdw growth habits are not strongly dependent on the choice of the growth substrates in various gas‐phase growth methods . However, the effects of the finite lattice‐mismatch during the sequential 2D stacking growth of layered chalcogenides have not been systematically addressed to date .…”