2015 IEEE International Symposium on Circuits and Systems (ISCAS) 2015
DOI: 10.1109/iscas.2015.7168943
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Substrate noise modeling with dedicated CAD framework for smart power ICs

Abstract: International audienceIn smart power IC technology, low and high voltage circuits are integrated on the same substrate. The commutation of the high voltage circuits can induce substrate parasitic currents which can severely disturb the operation of the low voltage circuits. The parasitic currents due to minority carriers in the high voltage technology can be significantly high. However, the minority carrier propagation into the substrate is not considered in most of existing circuit simulators. In this paper, … Show more

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Cited by 6 publications
(7 citation statements)
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“…They inherently model the minority carriers propagation in the substrate. The enhanced diodes, resistors, and homojunction models allow modeling these parasitic components [8]. AUTOMICS is a parasitic extraction tool that is capable of modeling the substrate including the minority carriers propagation.…”
Section: Automics: Pragmatic Substrate Parasitic Extraction Framementioning
confidence: 99%
See 2 more Smart Citations
“…They inherently model the minority carriers propagation in the substrate. The enhanced diodes, resistors, and homojunction models allow modeling these parasitic components [8]. AUTOMICS is a parasitic extraction tool that is capable of modeling the substrate including the minority carriers propagation.…”
Section: Automics: Pragmatic Substrate Parasitic Extraction Framementioning
confidence: 99%
“…The inputs and outputs of the tool are depicted in Figure 1. The main flow of the tool can be divided into three main stages [8], [9]: preprocessing stage, extraction stage, and post-processing stage. The input is the layout of the design.…”
Section: Automics: Pragmatic Substrate Parasitic Extraction Framementioning
confidence: 99%
See 1 more Smart Citation
“…A non-uniform meshing mechanism is used to reduce the complexity. The extraction phase, parasitic devices are extracted and classified based on the doping profiles and orientation [6]. A netlist describing the extracted parasitic components is generated.…”
Section: A Automics Tool Geometrical Features Extractionmentioning
confidence: 99%
“…The IC substrate can be modeled with a parasitic network of three lumped components: the EPFL diode, the EPFL resistance and the the EPFL homojunction. This network is highly dependent on the chip layout and can be automatically extracted processing the used mask layers [13]. Across PN junctions a diode is instantiated which injects or collects minority carriers, in the bulk substrate resistances are used to propagate the charges while at PP+ NN+ doping discontinuities the homojunction model is used.…”
Section: Substrate Current Modelmentioning
confidence: 99%