Substrate pre-treatment by ultrasonication with diamond powder mixtures for nucleation enhancement in diamond film growth

Buijnsters, Josephus Gerardus; Vazquez, L.; Meulen, J. J. ter

doi:10.1016/j.diamond.2009.04.007

Cited by 48 publications

(31 citation statements)

References 25 publications

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“…In comparison with Buijnsters et. al [14], where the best nucleation (highest nucleation density) was achieved in solution of nano-sized diamond powder mixed with microsized titanium powder in isopropyl alcohol, in our case we achieved the highest nucleation density for nanodiamond powder mixed with nanosized Ni and microsized Y. However, more flat diamond layers were reached by Co and Y particles.…”

Section: Resultssupporting

confidence: 55%

“…This presented work is an extended study of Buijnsters et. al [14]. We will show that use of Ni, Co and Y metal powders also results in enhanced nucleation density, and these metal powders are optimal solution for ultrasonic seeding.…”

Section: Introductionmentioning

confidence: 85%

“…Buijnsters et. al [14] have added metal particles such as Ti, Fe and W into solutions with nanodiamond powder. They concluded that metal particles have strong influence on the nucleation density and homogeneity of the nucleation.…”

Section: Introductionmentioning

confidence: 99%

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Study of diamond film nucleation by ultrasonic seeding in different solutions

et al. 2011

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Ê Ú ¿½ Ñ Ö ¾¼½¼ ÔØ ½ Ë ÔØ Ñ Ö ¾¼½½ ×ØÖ ØIn this study we have investigated diamond nucleation on Si substrates by ultrasonic seeding with different liquid solutions of Ultradispersed Detonation Diamond (UDD) powder in a mixture of metal nano-or microparticles (Ni, Co, Y). The influence of different solutions on nucleation efficiency was investigated. For highlighting nucleation centers and better evaluation of the nucleation process the nucleated samples were moved into a Microwave Plasma Enhanced Chemical Vapor Deposition (MW CVD) reactor and a "short-time" (10 min), then followed by a "long-time" (+1 hour), diamond deposition was performed. The morphology of samples was characterized by Scanning Electron Microscopy (SEM) and the chemical composition of grown diamond layer was investigated by Raman Spectroscopy. From the measurements we found out that microsized metal particles positively influenced nucleation and the uniformity of the deposited diamond thin film. The lowest surface roughness was achieved in the case of nanodiamond powder mixed with Co and Y metal powder.

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Section: Resultssupporting

confidence: 55%

Section: Introductionmentioning

confidence: 85%

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Study of diamond film nucleation by ultrasonic seeding in different solutions

et al. 2011

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“…In addition, the Mo surface is much softer than the blank Si substrate, and the Mo/Si substrate will deform more easily under the ultrasonic action of heavily impacting detonation nanodiamond particles. 15 Next to the expected higher degree of geometrical interlocking of nanodiamond seeds on the rougher Mo film surface, the plastic deformation of the exposed Mo/Si substrate surface might also contribute to a more efficient embedding of nanosized diamond seeds as compared to blank silicon.…”

Section: Seed Densitymentioning

confidence: 99%

“…[10][11][12][13][14] The most widely applied substrate seeding method consists of an ultrasonic treatment in a suspension of diamond powders. 15 Extremely high nucleation densities ͑ϳ10 11 sites/ cm 2 ͒ have been reported on using monodispersed nanometer-sized diamond particles in aqueous solutions 16 and slurries in dimethylsulfoxide. 17 Also, the use of so-called ultradispersed nanodiamond particles buried under a sol-gel TiO 2 layer resulted in an effective nucleation of NCD films.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of the nucleation of smooth and dense nanocrystalline diamond films by using molybdenum seed layers

Buijnsters

Vázquez

Dreumel

et al. 2010

Journal of Applied Physics

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A method for the nucleation enhancement of nanocrystalline diamond ͑NCD͒ films on silicon substrates at low temperature is discussed. A sputter deposition of a Mo seed layer with thickness 50 nm on Si substrates was applied followed by an ultrasonic seeding step with nanosized detonation diamond powders. Hot-filament chemical vapor deposition ͑HF-CVD͒ was used to nucleate and grow NCD films on substrates heated up at 550°C. The nucleation of diamond and the early stages of NCD film formation were investigated at different methane percentages in methane/ hydrogen gas mixtures by atomic force microscopy, micro-Raman spectroscopy, scanning electron microscopy, and grazing incidence x-ray analyses in order to gain specific insight in the nucleation process of NCD films. The nucleation kinetics of diamond on the Mo-coated Si substrates was found to be up to ten times higher than on blank Si substrates. The enhancement of the nucleation of diamond on thin Mo interlayers results from two effects, namely, ͑a͒ the nanometer rough Mo surface shows an improved embedding of ultrasonically introduced nanosized diamond seeds that act as starting points for the diamond nucleation during HF-CVD and ͑b͒ the rapid carbonization of the Mo surface causes the formation of Mo 2 C onto which diamond easily nucleates. The diamond nucleation density progressively increases at increasing methane percentages and is about 5 ϫ 10 10 cm −2 at 4.0% methane. The improved nucleation kinetics of diamond on Mo interlayers facilitates the rapid formation of NCD films possessing a very low surface roughness down to ϳ6 nm, and allows a submicron thickness control.

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Cobalt out‐diffusion and carbon phase composition at the WC‐10%Co/diamond film interface investigated by XPS, SEM, Raman and SIMS

Hojman

Akhvlediani

Alagem

et al. 2012

Physica Status Solidi (a)

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The effect of cobalt out‐diffusion from the WC‐10%Co/diamond film interface towards the diamond film surface, in terms of carbon phase, chemical composition and dependence of pre‐treatment for enhancement of diamond formation was investigated. Diamond films of various thicknesses were deposited onto substrates pre‐treated by a dual step process consisting of carburization and subsequently diamond seeding or just diamond seeding. Our findings show that the dual step pre‐treatment promotes diamond formation at the initial stages of deposition, decreases the content of out‐diffusing cobalt and prevents self‐delamination after 360 min of diamond film deposition. Conversely, delamination occurs after this deposition time from substrates pre‐treated by seeding only. Under our deposition conditions aggregation of cobalt at the diamond film surface occurs and a nearly constant concentration was measured irrespective of deposition time, along with depletion of cobalt from the diamond film‐substrate near interface region. The composition at the delaminated interface includes a high content of sp2 bonded carbon and a low content of cobalt, which point out that poor adhesion of diamond films to WC‐10%Co is influenced by the out‐diffusion of cobalt and formation of a graphitic interlayer, mainly at the initial stages of diamond film formation.

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Substrate pre-treatment by ultrasonication with diamond powder mixtures for nucleation enhancement in diamond film growth

Cited by 48 publications

References 25 publications

Study of diamond film nucleation by ultrasonic seeding in different solutions

Study of diamond film nucleation by ultrasonic seeding in different solutions

Enhancement of the nucleation of smooth and dense nanocrystalline diamond films by using molybdenum seed layers

Cobalt out‐diffusion and carbon phase composition at the WC‐10%Co/diamond film interface investigated by XPS, SEM, Raman and SIMS

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