Substrate temperature dependent performance of near infrared photoresponsive organic field effect transistors based on lead phthalocyanine

Li, Yao; Zhang, Jianping; Lv, Wenli; Luo, Xiao; Sun, Lei; Zhong, Junkang; Zhao, Feiyu; Huang, Fobao; Peng, Yingquan

doi:10.1016/j.synthmet.2015.04.011

Cited by 19 publications

(15 citation statements)

References 27 publications

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“…[130] The bandgaps of some candidates are lower than 1.7 eV and thus have the potential to be applied in NIR photosensing. [132][133][134] PbPc has two kinds of crystal phases, monoclinic and triclinic. Its corresponding absorption peak is located at ≈800 nm.…”

Section: Low Bandgap Organic Semiconductorsmentioning

confidence: 99%

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

112

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The operating frequency of ring oscillators or radio-frequency identification tags made by OFETs have surpassed MHz. [27,28] With the growing level of integration and the operating frequency of OFETs, the power dissipation issue can no longer be ignored. Considering the material composition of most organic semiconductors, controlling the temperature rise within a reasonable range is important to avoid the unwanted degradation of organic materials and therefore maintain stable device operation. In addition, OFETs fabricated on flexi ble substrates somehow limit the use of conventional batteries. To avoid externally wiring the batteries, flexible OFET-based circuits can be expected to be self-powered by integrating them with organic solar cells, thermoelectric modules, or triboelectric nanogenerators. [29,30] All of these demands require OFETs operating with extremely low power consumption. Rapid progress has been made in this field, and research efforts have focused on reducing the operating voltage of OFETs, [31][32][33] enhancing the switching efficiency of transistors, [34][35][36][37] and demonstrating several novel device concepts for low-power applications. [38][39][40][41][42] Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices dueThe organic field-effect transistor (OFET) is the basic building block of integrated circuits. The charge carrier mobility and operating frequency of OFETs have continued to increase; therefore, the power dissipation of OFETs can no longer be ignored. Many research efforts have been made to develop low-power-consumption OFETs and complementary circuits. Despite the switching function, OFETs can also be utilized in emerging energy-related applications, such as near-infrared (NIR) photodetectors and organic thermoelectric devices. Organic phototransistors show considerably higher photo responsivity than other photodetector architectures due to field-effect charge modulation. The photoinduced gate modulating largely suppresses the dark current while simultaneously providing gain. These characteristics may favor NIR light detection and suggest that the organic phototransistor is a promising candidate for optoelectronic applications in the NIR regime. For organic thermoelectric applications, OFETs can work as a powerful tool for examining the charge and energy transport in the organic semiconductor, thus giving insight into organic thermoelectric studies. In this review, the authors highlight recent advances in OFET-related energy topics, including lowpower-consumption OFETs, NIR photodetectors, and organic thermoelectric devices. The remaining challenges in the field will also be discussed.

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Section: Low Bandgap Organic Semiconductorsmentioning

confidence: 99%

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ren

Yang

Gao

et al. 2018

Advanced Energy Materials

112

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“…29 Lead phthalocyanine (PbPc) is a shuttlecock-shaped molecule with a high absorption coefficient in the NIR region, which can be further enhanced by means of triclinic absorption induced by selected molecule template or improved substrate temperature. [30][31][32] We have successfully demonstrated highly efficient NIR absorption in organic phototransistors 32 and upconversion devices 33 based on the proposed strategies above.…”

Section: Introductionmentioning

confidence: 99%

“…The thermally evaporated PbPc film is identified to have a biggish crystal grain size (~100 nm) with dense and uniform shape, which indicates that a better crystallinity with less grain boundary is obtained here. 32 It has been established that the average grain size of organic film increases with substrate temperature and the charge mobility is higher inside grain. 32,34,35 In contrast, the surface of perovskite films shows micrometer-sized porous structure instead of compact film ( Supplementary Fig.…”

Section: Introductionmentioning

confidence: 99%

“…32 It has been established that the average grain size of organic film increases with substrate temperature and the charge mobility is higher inside grain. 32,34,35 In contrast, the surface of perovskite films shows micrometer-sized porous structure instead of compact film ( Supplementary Fig. S3b versus 3a) to form random networks (Fig.…”

Section: Introductionmentioning

confidence: 99%

“…2c, which indicates that PbPc raw powder and film (deposited at T sub = 25°C) is mainly monoclinic phase (200); 31,39 whereas, a triclinic phase is observed by depositing PbPc at T sub = 140°C, assigned to triclinic (100). 31,32 Previous publications have manifested that triclinic PbPc has a strong absorption band in NIR region, suggesting PbPc can be used as NIR photosensitizer. 31,32,39 In addition, XRD patterns of both MAPbI 3 − x Cl x and PbPc/MAPbI 3 − x Cl x films have similar features, showing two main peaks at 2θ = 14.18°and 28.51°a ssociated with the (110) and (220) planes of perovskite crystals, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Ultrasensitive flexible broadband photodetectors achieving pA scale dark current

Luo

Zhao

et al. 2017

npj Flex Electron

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Organolead halide perovskite is a newly emerging low-cost, solution-processable material with a broadband absorption from the ultraviolet (UV) to visible (Vis) region, which has attracted a great deal of interest in high-performance optoelectronic devices. However, some practicable applications need a cover of UV-Vis-NIR region for photoelectric conversion, a task that remains a significant challenge for further extending the absorption toward the near-infrared radiation (NIR) region. Here, to the best of our knowledge, we prove for the first time an ultrasensitive flexible broadband photodetector based on porous organolead perovskitephthalocyanine heterostructure, which combines the synergetic properties of high UV-Vis absorbance of perovskite with enhanced NIR absorption for triclinic lead phthalocyanine. The photosensitivity of the as-prepared devices reaches up to 10 4 at a low intensity of 10 mW cm −2 , which is among the largest values reported for broadband photodetectors. Significantly, performed at room temperature, the device achieves a pA scale dark current along with an ultrafast response speed of less than 0.6 ms for as-adopted full spectra. Our results provide an easy and promising route to develop low-cost, flexible and highly sensitive UV-Vis-NIR photodetectors.

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Insight into trap state dynamics for exploiting current multiplication in organic photodetectors

Luo

et al. 2016

Physica Rapid Research Ltrs

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Trap‐induced current multiplication has received tremendous attention in organic photodetectors because it is not required for a pre‐amplifier circuit to read weak photocurrent signals. However, a plausible correlation between energy‐distin‐guishable trap states and device performance has not been established for guiding the device design, a task that remains a significant challenge. Here, we propose an ingenious strategy to demonstrate current multiplication by engineering an ultrathin fullerene (C60) film as hole trap or barrier layer, which illustrates trap‐state dynamics through systematical investigations on device current fluctuations in darkness and illumination conditions. The comparison of trap‐dependent performances between experimental and control devices clearly shows that the traps play a critical role in generating the multiplication effect. And shallow trap states are estimated to be more favorable for improving the device restorability. Thus, we anticipate that trap engineering, by selectively passivating deep traps whilst retaining shallow ones, will be a fruitful approach for further research, leading to high‐performance photodetectors with superior current multiplication and temporal response. (© 2013 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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Substrate temperature dependent performance of near infrared photoresponsive organic field effect transistors based on lead phthalocyanine

Cited by 19 publications

References 27 publications

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

Ultrasensitive flexible broadband photodetectors achieving pA scale dark current

Insight into trap state dynamics for exploiting current multiplication in organic photodetectors

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