Subsurface imaging of grain microstructure using picosecond ultrasonics

Khafizov, Marat; Pakarinen, Janne; He, Lingfeng; Henderson, Hunter B.; Manuel, Michele V.; Nelson, Andrew T.; Jaques, Brian J.; Butt, Darryl P.; Hurley, David H.

doi:10.1016/j.actamat.2016.04.003

Cited by 29 publications

(18 citation statements)

References 41 publications

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“…Other experimental techniques such as stress induced birefringence, Brillouin scattering, and ellipsometry under uniaxial stress can only provide averaged bulk values of the photoelastic coefficients. TDBS, on the other hand, has been widely used to access depth dependent material properties such as elastic and optical inhomogeneities in disordered films 15 – 17 ion implantation induced modification of interfacial bonding 18 , sub- μ m textures in materials compressed at megabar pressures 19 , 20 doping profiles 21 , distribution of stress 22 , imaging of grain microstructure 23 , and determination of laser-induced temperature gradients in liquids 24 . Recently, we applied this technique to determine depth profiles of the complex refractive index modification arising from H + implantation in 4H-SiC 25 .…”

Section: Introductionmentioning

confidence: 99%

The photoelastic coefficient $${P}_{12}$$ of H+ implanted GaAs as a function of defect density

Baydin

Krzyżanowska

Gatamov

et al. 2017

Sci Rep

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The photoelastic phenomenon has been widely investigated as a fundamental elastooptical property of solids. This effect has been applied extensively to study stress distribution in lattice-mismatched semiconductor heterostructures. GaAs based optoelectronic devices (e.g. solar cells, modulators, detectors, and diodes) used in space probes are subject to damage arising from energetic proton (H+) irradiation. For that reason, the effect of proton irradiation on photoelastic coefficients of GaAs is of primary importance to space applied optoelectronics. However, there yet remains a lack of systematic studies of energetic proton induced changes in the photoelastic properties of bulk GaAs. In this work, the H+ energy and fluence chosen for GaAs implantation are similar to that of protons originating from the radiation belts and solar flares. We present the depth-dependent photoelastic coefficient profile in non-annealed H+ implanted GaAs obtained from the analysis of the time-domain Brillouin scattering spectra. The depth-dependent profiles are found to be broader than the defect distribution profiles predicted by Monte Carlo simulations. This fact indicates that the changes in photoelastic coefficient depend nonlinearly on the defect concentrations created by the hydrogen implantation. These studies provide insight into the spatial extent to which defects influence photoelastic properties of GaAs.

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Section: Introductionmentioning

confidence: 99%

The photoelastic coefficient $${P}_{12}$$ of H+ implanted GaAs as a function of defect density

Baydin

Krzyżanowska

Gatamov

et al. 2017

Sci Rep

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“…The acoustic velocities are obtained by calculating eigenvalues of the Christoffel equation using the rotated elastic stiffness tensor 16 . The Euler angles used to derive the rotated elastic stiffness tensor are φ 1 = −63°, Φ = 25°, and φ 2 = 86°.…”

Section: Resultsmentioning

confidence: 99%

“…Applications were further extended to depth profiling of elastic inhomogeneities in nanoporous organosilicate 13 and ion irradiated GaAs 14 and to three-dimensional imaging of animal cells 15 . Recent work that is closely tied to the current study involves surface scanning using TDBS to image subsurface grain boundary orientation 16 and to resolve the position of different crystallites 17 . A review of other applications of TDBS can be found in reference 18 .…”

mentioning

confidence: 99%

Imaging grain microstructure in a model ceramic energy material with optically generated coherent acoustic phonons

et al. 2020

Self Cite

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Characterization of microstructure, chemistry and function of energy materials remains a challenge for instrumentation science. This active area of research is making considerable strides with methodologies that employ bright X-rays, electron microscopy, and optical spectroscopy. However, further development of instruments capable of multimodal measurements, is necessary to reveal complex microstructure evolution in realistic environments. In this regard, laser-based instruments have a unique advantage as multiple methodologies are easily combined into a single instrument. A pump-probe method that uses optically generated acoustic phonons is expanding standard optical characterization by providing depth resolved information. Here we report on an extension of this method to image grain microstructure in ceria. Rich information regarding the orientation of individual crystallites is obtained by noting how the polarization of the probe beam influences the detected signal amplitude. When paired with other optical microscopies, this methodology will provide new perspectives for characterization of ceramic materials.

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“…Picosecond and femtosecond lasers have been adopted successfully for material characterization such as exploring acoustic features on the nanoscale [ 124 , 125 , 126 ], acoustic imaging in thin films and microstructures on opaque substrates [ 123 , 124 , 127 , 128 , 129 ], material properties measurement of thin film [ 130 ], measurement of switching activity (changes of signal values) [ 131 ], and non-destructive evaluation of micrometric diamond films [ 120 ]. The duration of the laser pulse can be tuned to produce acoustic wavelength as short as 5 nm and provide volumetric information about the structure they travel in [ 123 , 124 ]. Ultrafast optical laser ultrasonics can generate and detect gigahertz–terahertz ultrasonic waves by using ultrashort light pulses and very high repetition rates for the excitation pulse.…”

Section: Ndt Methods For Ic Packagingmentioning

confidence: 99%

An Overview of Non-Destructive Testing Methods for Integrated Circuit Packaging Inspection

Aryan

Sampath

Sohn

2018

Sensors

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The article provides a review of the state-of-art non-destructive testing (NDT) methods used for evaluation of integrated circuit (IC) packaging. The review identifies various types of the defects and the capabilities of most common NDT methods employed for defect detection. The main aim of this paper is to provide a detailed review on the common NDT methods for IC packaging addressing their principles of operation, advantages, limitations and suggestions for improvement. The current methods such as, X-ray, scanning acoustic microscopy (SAM), infrared thermography (IRT), magnetic current imaging (MCI) and surface acoustic waves (SAW) are explicitly reviewed. The uniqueness of the paper lies in comprehensive comparison of the current NDT methods, recommendations for the improvements, and introduction of new candidate NDT technologies, which can be adopted for IC packaging.

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Subsurface imaging of grain microstructure using picosecond ultrasonics

Abstract: 2016-11-03T14:11:40

Cited by 29 publications

References 41 publications

The photoelastic coefficient $${P}_{12}$$ of H+ implanted GaAs as a function of defect density

The photoelastic coefficient $${P}_{12}$$ of H+ implanted GaAs as a function of defect density

Imaging grain microstructure in a model ceramic energy material with optically generated coherent acoustic phonons

An Overview of Non-Destructive Testing Methods for Integrated Circuit Packaging Inspection

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