Subthreshold Swing Modeling of Gaussian Doped Double-Gate MOSFETs and its Validation Based on TCAD Simulation

Singh, Prince Kumar; Baral, Kamalaksha; Kumar, Sanjay; Singh, Ashish Kumar; Tripathy, Manas Ranjan; Upadhyay, Rishibrind Kumar

doi:10.1109/conecct50063.2020.9198488

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2022

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“…The gate oxide layer is replaced with the high-k dielectric to enable the circuit to work in high operating frequencies. They are mainly manufactured using atomic layer deposition that gives cost-effective miniaturization of electronic circuits [10]. The high-k dielectric used in this work is the rare earth element Lanthanum along with oxygen to create La2O3 also called Lanthana.…”

Section: Introductionmentioning

confidence: 99%

Analysis of InN/La2O3 Twosome for Double-Gate MOSFETs for Radio Frequency Applications

Gowthaman

Srivastava

2022

MSF

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The channel material of a gate describes the operating condition of the MOSFET. A suitable operating condition prevails in MOSFETs if the transistors are quite enough to observe and control at the nanometer regime. An efficient gate and channel material have been proposed in this work which is based on the electrical properties they exhibit at the temperature of 300K. The doping concentration for the electrons and holes is maintained to be 1Χ1019cm-3 for the entire electronic simulator. The simulation results show that using La2O3 along with Indium Nitride (InN) material for the designing of Double-Gate (DG) MOSFETs provides better controllability over the transistor at a channel length of 50nm. This proposed DG-MOSFET is more compliant than the conventional coplanar MOSFETs based on Silicon.

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Section: Introductionmentioning

confidence: 99%