Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(111) substrates by using hydride vapor phase epitaxy

Lee, Sang-Hwa; Oh, Taegeon; Shin, Boa; Kim, Chinkyo; Lee, Dong Ryeol; Lee, Hyun-Hwi

doi:10.1016/j.jcrysgro.2010.03.026

Cited by 5 publications

(4 citation statements)

References 14 publications

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“…The peaks at 2θ = 35.5°, 2θ = 39.1° and 2θ = 58.9° are related to the silicon substrate. This XRD analysis is in full agreement with the state-of-the-art: (i) GaN NRs with hexagonal cross section have been previously grown along c-direction through patterned SiN x layer deposited on c-plane sapphire templates by MOVPE; (ii) vertical GaN NRs preferentially oriented in the c-direction were grown directly on c-plane sapphire substrate by HVPE , and measured by synchrotron X-ray beam; (iii) (0002), (11̅00) and (112̅0) peaks were reported by HRXRD measurements on GaN NRs synthesized on r-plan sapphire substrate by combining MBE and MOVPE; (iv) (0002), (101̅0), (112̅0), (101̅3) and (202̅1) peaks were detected by XRD measurements on GaN NRs grown by Au-assisted CVD …”

Section: Resultssupporting

confidence: 82%

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Lekhal

André

Trassoudaine

et al. 2012

Crystal Growth & Design

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GaN nanorods (NRs) with exceptional crystal-defined morphologies were grown by near-equilibrium hydride vapor phase epitaxy (HVPE) on c-plane sapphire (0001) and silicon (111) substrates. Hexagonal faceted individual, bunched, and hyperbunched GaN NRs were synthesized by using a catalyst-free process. GaN NRs with a diameter in the range of 125–700 nm and a length in the range of 0.9–3 μm were grown in a record short process time of 30 min. The influence of growth temperature and ammonia gas flow rate was investigated to establish the nucleation and the growth mechanisms of the GaN NRs. Shape and crystallographic facets of the NRs are discussed and a condensation growth mechanism is proposed for the formation of bunched GaN NRs. Emphasis is placed on the crystal symmetry of the nuclei in the first stage of growth. The morphology and the structural properties were analyzed by field emission scanning electron microscopy (SEM) and X-ray diffraction spectroscopy (XRD).

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Section: Resultssupporting

confidence: 82%

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Lekhal

André

Trassoudaine

et al. 2012

Crystal Growth & Design

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“…In addition, a two-dimensional (2D) detector simultaneously captures diffracted photons over a wide range of angles, providing a reciprocal space structure of the sample with single data acquisition . Importantly, varying the azimuthal angle by rotating the sample can reveal the multiple heteroepitaxial relationships existing between the grown nanostructure and the substrate. − …”

Section: Introductionmentioning

confidence: 99%

Initial Growth Behavior in Catalyst-Free-Grown Vertical ZnO Nanorods on c-Al₂O₃, as Observed Using Synchrotron Radiation X-ray Scattering

Hong

et al. 2023

Crystal Growth & Design

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In this study, synchrotron radiation X-ray diffraction analysis is used to investigate the initial growth dynamics of metal–organic vapor-phase epitaxy-grown ZnO nanorods on c-Al2O3 substrates. A two-dimensional area detector with a grazing-incidence geometry enables projected reciprocal space mapping (RSM) using coordinate transformation of diffraction images. The projected RSM reveals multiple heteroepitaxial relationships between ZnO and Al2O3, including the dominant relationship of ZnO(101̅0)∥Al2O3(21̅1̅0). Evolution of internal strain is revealed by an additional study on diffraction images and θ–2θ scans. Surface topology from atomic force microscopy estimates the growth rate, supported by the Scherrer equation analysis of the θ–2θ diffraction.

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“…Only a few investigations have reported the growth of GaN NWs by VLS-HVPE [17][18][19] with chloride precursors, and all of them used low temperature (650-750 • C) experimental conditions. The catalyst-free HVPE growth of 1D GaN has been reported elsewhere, but the 1D structures are short (1-3 µm long) and their aspect ratio is relatively small (<10) [20][21][22]. No systematic studies of the two basic parameters, the V/III ratio and the growth temperature, have been published.…”

Section: Introductionmentioning

confidence: 99%

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

et al. 2012

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The hydride vapor phase epitaxy (HVPE) process exhibits unexpected properties when growing GaN semiconductor nanowires (NWs). With respect to the classical well-known methods such as metal organic vapor phase epitaxy and molecular beam epitaxy, this near-equilibrium process based on hot wall reactor technology enables the synthesis of nanowires with a constant cylinder shape over unusual length. Catalyst-assisted HVPE shows a record short time process (less than 20 min) coupled to very low precursor consumption. NWs are grown at a fast solidification rate (50 μm h(-1)), facilitated by the high decomposition frequency of the chloride molecules involved in the HVPE process as element III precursors. In this work growth temperature and V/III ratio were investigated to determine the growth mechanism which led to such long NWs. Analysis based on the Ni-Ga phase diagram and the growth kinetics of near-equilibrium HVPE is proposed.

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Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(111) substrates by using hydride vapor phase epitaxy

Cited by 5 publications

References 14 publications

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Initial Growth Behavior in Catalyst-Free-Grown Vertical ZnO Nanorods on c-Al₂O₃, as Observed Using Synchrotron Radiation X-ray Scattering

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

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Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(111) substrates by using hydride vapor phase epitaxy

Cited by 5 publications

References 14 publications

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Exceptional Crystal-Defined Bunched and Hyperbunched GaN Nanorods Grown by Catalyst-Free HVPE

Initial Growth Behavior in Catalyst-Free-Grown Vertical ZnO Nanorods on c-Al2O3, as Observed Using Synchrotron Radiation X-ray Scattering

Catalyst-assisted hydride vapor phase epitaxy of GaN nanowires: exceptional length and constant rod-like shape capability

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Initial Growth Behavior in Catalyst-Free-Grown Vertical ZnO Nanorods on c-Al₂O₃, as Observed Using Synchrotron Radiation X-ray Scattering