SUCIMA - Silicon Ultra fast Cameras for electron and gamma sources in Medical Applications

Caccia, M.; Alemi, M.; Badano, Luigi P.; Bol, J.; Berst, D.; Bianchí, C.; Bulgheroni, A.; Cannillo, F.; Cappellini, C.; Czermak, A.; Claus, G.; Colledani, C.; Conte, L.; Deptuch, G.; Dierlamm, A.; Domanski, K.; Dulinski, W.; Dulny, B.; Ferrando, O.; Grigoriev, E.; Grabiec, P.; Lorusso, R.; Jaroszewicz, B.; Jastrzab, M.; Jungermann, L.; Kucewicz, W.; Kucharski, K.; Kuta, S.; Leo, G.; Machowski, W.; Marczewski, J.; Mondry, G.; Niemiec, H.; Novario, Raffaele; Nowak, Ł.; Pezzetta, M.; Popowski, Youri; Riester, J.L.; Sampietro, C.; Sapor, M.; Schweickert, H.; Sowicki, B.; Tanzi, Fabio; Tomaszewski, D.; Zalewska, A.

doi:10.1109/nssmic.2003.1352178

Cited by 9 publications

(7 citation statements)

References 11 publications

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“…The endpoint energy of electrons is 18.6 keV; the mean decay energy is 5.7 keV, while the most probable value is 3.8 keV. Recently, new solid state pixel detectors dedicated to H autoradiography were proposed [13], [5] and [15]. Nevertheless, there is still room for improvements in existing techniques with emphasis on cost, reliability, sensitivity and ease of use.…”

Section: B Tritium Autoradiographymentioning

confidence: 99%

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High-resolution, back-side illuminated monolithic active pixel sensor for low-energy electron imaging

Deptuch

Dulinski

Caccia³

et al. 2005

IEEE Trans. Nucl. Sci.

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A new domain of application of monolithic active pixel sensors, with respect to particle tracking, has been triggered by the innovative idea of a nondestructive beam monitoring system in the extraction lines of a hadron-therapy center. The beam monitoring exploits secondary electrons emitted from a submicrometer thick Al foil, intersecting the beam. Electrons are accelerated in an electrostatic field. The detection of low-energy electrons, up to 30 keV, is required. The sensitivity to these energies is obtained by thinning the detector, originally fabricated in a standard VLSI technology, down to the thickness of the radiation sensitive layer. A thin entrance window, in the order of 100 nm, is provided. Monolithic active pixel sensors for low-energy electron imaging can be prospectively used in several domains: in bioscience for cell process study using radiotracers, e.g., /sup 3/H(18 keV/spl beta//sup -/) or fluorescence imaging exploiting the Hybrid Photodiodes principle, in safety or environmental studies for neutron imaging with converters directly deposited or in micro-beam facilities for position resolving in studies of living cell irradiations. The low-energy electron imaging capabilities for installation inside an HPD test facility and the results obtained with a /sup 3/H marked source are shown. The detector used is the 1/spl times/10/sup 6/ pixel MIMOSA V chip. The back-thinning up to the epitaxial layer was applied, resulting in a high resolution, back-side illuminated imager

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Section: B Tritium Autoradiographymentioning

confidence: 99%

“…SUCIMA is an FP5 European Community project [5]. One of the tasks of the collaboration was to develop a nondestructive beam monitoring system for a hadron-theraphy center [6].…”

mentioning

confidence: 99%

High-resolution, back-side illuminated monolithic active pixel sensor for low-energy electron imaging

Deptuch

Dulinski

Caccia³

et al. 2005

IEEE Trans. Nucl. Sci.

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“…While noninterceptive instrumentation is not sensitive enough to detect average beam intensities from few pA to few nA, with spill durations 1 s. To overcome this limitation an innovative noninterceptive monitor, named secondary emission for low-interception monitoring (SLIM) [2], capable of providing beam intensity and profile measurement during the treatment without degrading the hadron beam, has been proposed. The device has been developed in the framework of the silicon ultrafast cameras for electrons and gamma sources in medical applications (SUCIMA) project [3] funded by the European Commission with the primary goal of developing a real-time dosimeter based on direct detection in a silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

Secondary emission monitor for low-interception monitoring (SLIM): an innovative nondestructive beam monitor for the extraction lines of a hadrontherapy center

Badano¹,

Ferrando²,

Klatka

et al. 2004

IEEE Trans. Nucl. Sci.

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Real-time monitoring of hadrontherapy beam intensities and profiles is a critical issue for the optimization of the dose delivery to the patient tumour tissue, the patient safety, and the operation of the accelerator complex. For this purpose, an innovative beam monitor, based on the secondary emission of electrons by a nonperturbative, submicrometer-thick Al target placed directly in the extracted beam path, is being proposed. The secondary electrons, accelerated by an electrostatic focusing system, are detected by a monolithic silicon position sensitive sensor, which provides the beam intensity and position with a precision of 1 mm at a 10-kHz frame rate. The conceptual design and the engineering study optimized for hadrontherapy are presented together with the results of the laboratory tests with thermoionic electrons and the first measurements in a hadron beam.

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“…A basic cell, presented in figure 2, consists of the following elements: input transistor acting as a source follower, resetting transistor, which periodically discharges the integration capacitance of the detector and row-selection transmission gate. The proposed configuration of the readout channel was strictly linked to SUCIMA applications [2]. The charge generated in the sensitive volume is integrated on the pixel capacitance during a given time period.…”

Section: Small Area Soi Detectormentioning

confidence: 99%

“…One of its goals is the development of a monolithic sensor optimised for medical imaging applications, especially dosimetry of radioactive sources for brachytherapy and beam monitoring for hadrontherapy [2].…”

Section: Introductionmentioning

confidence: 99%

Fully depleted monolithic active pixel sensor in SOI technology

Kucewicz

Bulgheroni²,

Caccia³

et al.

IEEE Symposium Conference Record Nuclear Science 2004.

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An active pixel detector, which exploits waferbonded Silicon on Insulator (SOI) substrates for integration of the readout electronics with the pixel detector, is presented. The main concepts of the proposed monolithic sensor and the preliminary tests results with ionising radiation sources are addressed.Silicon On Insulator is an alternative solution for a monolithic active pixel detector, which allows integrating a fully depleted sensor and front-end electronics active layers into one silicon wafer. The main idea of the sensor relies on the use of both monolithic silicon layers (device and support layers) of the SOI substrate for fabrication of pixel detector diodes and readout electronics.Such detectors can find wide range of applications, not only in particle physics but also in medicine, space science and many other disciplines.The sensor structure and the readout configuration have been developed and the measurements of a dedicated test structure have validated the new technology of the SOI detector. Small SOI sensor matrices with 8 by 8 channels have been recently produced and tested.

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SUCIMA - Silicon Ultra fast Cameras for electron and gamma sources in Medical Applications

Cited by 9 publications

References 11 publications

High-resolution, back-side illuminated monolithic active pixel sensor for low-energy electron imaging

High-resolution, back-side illuminated monolithic active pixel sensor for low-energy electron imaging

Secondary emission monitor for low-interception monitoring (SLIM): an innovative nondestructive beam monitor for the extraction lines of a hadrontherapy center

Fully depleted monolithic active pixel sensor in SOI technology

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