PbS
colloidal quantum dots (CQDs) are versatile building blocks
for bottom-up fabrication of various optoelectronic devices. The transport
properties of thin films of this class of materials depend on the
size of the CQDs, their surface ligands, and stoichiometry. The most
common synthetic methods yield PbS CQDs with an excess of Pb atoms,
which induces n-type transport properties in CQD films. In this work,
we developed a new synthesis, which offers S-rich PbS CQDs. Thanks
to their sufficient colloidal stability in nonpolar solvents, we established
a protocol for the integration of these CQDs into thin field-effect
transistors and found strong hole-dominated transport with a hole
mobility of about 1 × 10–2 cm2/Vs.
Moreover, we were able to enhance the electron mobility for almost
two orders of magnitude while keeping the hole mobility nearly the
same. This approach allows us to obtain reliably p-doped PbS CQDs,
which can be used for the fabrication of various electronic and optoelectronic
devices.