Sulfur-modified surface of InP(001): Evidence for sulfur incorporation and surface oxidation

Chassé, T.; Chassé, A.; Peisert, Heiko; Streubel, P.

doi:10.1007/s003390050621

Cited by 27 publications

(30 citation statements)

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“…Preferential bonding of sulfur atoms to the surface indium atoms has been observed in several photoemission studies of sulfur species on InP(110) and InP(001) surfaces, [12][13][14] and surface-sensitive core and valence level photoemission measurement of several alkanethiols on III-V(110) also support the thesis of S-In(Ga) bonding. 17 Thus, structural constraints by the substrates will be imposed by the different In-In (Ga-Ga) distances in the surface, which provide the links to the adsorbed thiols.…”

Section: Resultssupporting

confidence: 53%

“…8 This lack of knowledge is also in contrast to the large body of investigations, which dealt with modification of semiconductor surfaces using inorganic sulfur compounds. [12][13][14][15][16] Reports have been given on the influence of alkanethiols on Schottky barrier heights on metal-semiconductor contacts and on passivating properties of adsorbed thiols on semiconductor surfaces. Recently, we have demonstrated that adsorbed alkanethiols form self-assembling layers on (110) surfaces of III-V semiconductors like InP, as well.…”

Section: Introductionmentioning

confidence: 99%

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Angular Resolved X-Ray Absorption Near Edge Structure Investigation of Adsorbed Alkanethiol Monolayers on Iii–v(110) Surfaces

1999

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The structure of alkanethiol monolayers on III-V(110) surfaces was studied by analyzing the X-ray absorption near edge structure (XANES) of the carbon K edge. Pronounced absorption maxima were observed for special orientations of the polarization vector of the radiation as revealed from angulardependent measurements, suggesting a rather well-defined molecular axis of the alkyl chains. From quantitative evaluations of these angular dependences the chains were found to be tilted from the normal towards the [001] direction of the (110) surfaces by 34 • and 15 • in the case of hexadecanethiol (HDT) adsorption on InP and GaP, respectively. The similarities as well as the differences in tilt angles between the substrates are dicussed in terms of constraints imposed by the surface structure and lattice constants as well as the space requirements of the van der Waals spheres of the adsorbed thiols. A unique feature observed on these monolayers is the nearly complete alignment of the alkyl chains with respect to the azimuthal orientation. We suggest that this adsorbate system represents the case of a single domain orientation within the organic monolayer.

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Section: Resultssupporting

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Angular Resolved X-Ray Absorption Near Edge Structure Investigation of Adsorbed Alkanethiol Monolayers on Iii–v(110) Surfaces

1999

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“…17 This sulfur-terminated top surface of the p-InP reduces the surface states and thus the carrier trap density at the inorganic/organic interface, facilitating the hole injection from the semiconductor layer to organic layer. It was reported that the surface Fermi level of an ͑NH 4 ͒ 2 S passivated p-InP is 0.2 eV higher than that of a clean p-InP sample, 18 which reduces the interfacial energetic barrier height for holes. This further improves the hole injection across the inorganic/organic interface.…”

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confidence: 99%

Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector

Ban

Han

et al. 2007

Applied Physics Letters

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“…[11][12][13][14] In this study the influence of a (NH 4 ) 2 S passivation step after wet chemical treatments is investigated by SRPES. The various surface components of an as-received substrate will be discussed and will help to understand the effects of different ex-situ wet chemical treatments.…”

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Study of InP Surfaces after Wet Chemical Treatments

Cuypers

Dorp

Tallarida

et al. 2013

ECS J. Solid State Sci. Technol.

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The influence of different wet chemical treatments (HCl, H 2 SO 4 , NH 4 OH) on the composition of InP surfaces is studied by using synchrotron radiation photoemission spectroscopy (SRPES). It is shown that a significant amount of oxide remains present after immersion in a NH 4 OH solution which is ascribed to the insolubility of In 3+ at higher pH values. Acidic treatments efficiently remove the native oxide, although components like P 0 , In 0 and P (2± )+ suboxides are observed. Alternatively, the influence of a passivation step in (NH 4 ) 2 S solution on the surface composition was investigated. The InP surface after immersion into (NH 4 ) 2 S results in fewer surface components, without detection of P 0 and P (2± )+ suboxides. Finally, slight etching of InP surfaces in HCl/H 2 O 2 solution followed by a native oxide removal step, showed no significant effect on the surface composition.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-06-08 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-06-08 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-06-08 to IP

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Sulfur-modified surface of InP(001): Evidence for sulfur incorporation and surface oxidation

Cited by 27 publications

References 1 publication

Angular Resolved X-Ray Absorption Near Edge Structure Investigation of Adsorbed Alkanethiol Monolayers on Iii–v(110) Surfaces

Angular Resolved X-Ray Absorption Near Edge Structure Investigation of Adsorbed Alkanethiol Monolayers on Iii–v(110) Surfaces

Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector

Study of InP Surfaces after Wet Chemical Treatments

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