Summary Abstract: Self-deconvolution in C
 V
 V Auger electron spectroscopy

Sasse, A.G.B.M.; Lakerveld, D.G.; Silfhout, A. van

doi:10.1116/1.575632

Cited by 6 publications

(4 citation statements)

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“…If the atomic matrix elements are known, then the TDOS can be interpreted as the LDOS, D(E) [26-281. Our (self-)deconvolution method [12,15,29] bypasses numerical problems such as the ambiguities of the square root of the complex phase in Fourier transforms [8,27,28] and the difficulties of the choice of the starting point of the sequential digital method developed by Hagstrum and Becker [6,7]. This method is based on global approximation using splines [30] and a modified non-linear least-squares fitting routine (Levenberg-Marquardt) [31].…”

Section: Determination Of the Tdos Of Clean Si(io0)mentioning

confidence: 99%

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Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations

et al. 1989

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Section: Determination Of the Tdos Of Clean Si(io0)mentioning

confidence: 99%

“…Neglecting the screening of the s-like valence band electrons of the core hole and final state shakeoff effects the Auger lineshape is mainly determined by step (ii) [2,10,12,22,23,[26][27][28]321 and the distortions are due to the first and third step.…”

Section: Correction Of the Auger Lineshapementioning

confidence: 99%

Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations

et al. 1989

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“…The self-deconvolution of A(E) with the assumption of constant atomic matrix elements across the valence band [6,7] can be interpreted as a transition density of states (TDOS). If the atomic matrix elements are known, then the TDOS can be interpreted as the LDOS, D(E) [26-281. Our (self-)deconvolution method [12,15,29] bypasses numerical problems such as the ambiguities of the square root of the complex phase in Fourier transforms [8,27,28] and the difficulties of the choice of the starting point of the sequential digital method developed by Hagstrum and Becker [6,7]. This method is based on global approximation using splines [30] and a modified non-linear least-squares fitting routine (Levenberg-Marquardt) [31].…”

Section: Determination Of the Tdos Of Clean Si(io0)mentioning

confidence: 99%

“…(iii) The Auger electron is scattered elastically and inelastically by the distorted surface charge distributions and the escaping Auger electron is distorted by the detection apparatus. Neglecting the screening of the s-like valence band electrons of the core hole and final state shakeoff effects the Auger lineshape is mainly determined by step (ii) [2,10,12,22,23,[26][27][28]321 and the distortions are due to the first and third step.…”

Section: Correction Of the Auger Lineshapementioning

confidence: 99%

Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV auger lineshape compared with cluster calculations

Sasse¹,

Wormeester²,

Hoef³

et al. 1989

Surface Science Letters

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The termination of a silicon crystal along the (100) orientation resulting in a 2x1 reconstructed surface induces relatively large variations in the local density of states (LDOS) of the different types of surface atoms, such as the up and down dimer atom and the backbond atom. Auger electron spectroscopy (AES) is able to probe the LDOS of the silicon atom in which the L,,, core hole has been created and is therefore a candidate to analyze the LDOS of the surface atoms. A detailed analysis of the SiLz,,W Auger electron spectrum allows us to determine a high quality transition density of state (TDOS) of the Si(100)2 x 1 reconstructed surface. The resolved peaks in the TDOS were compared with previous AES, UPS and EELS measurements reported by other investigators. Quantum chemical cluster calculations were used for the interpretation of the TDOS in the actual p-like and s-like partial local density of states for different types of silicon atoms. These quantum chemical cluster calculations of the partial LDOS localized at atoms of the Si(100)2~1 surface were found to be in agreement with other types of calculations. Comparing the experimental and the calculated DOS we were able to distinguish several new peaks in the TDOS obtained with AES and to discriminate features in the experimentally obtained TDOS into local electron distributions localized at different surface atoms.

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New approach for correction of distortions in spectral line profiles in Auger electron spectroscopy

Sasse

Wormeester

Silfhout

1988

Surface & Interface Analysis

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A new deconvolution method for Auger electron spectroscopy is presented. This method is based on a non-linear least squares minimizing routine (Levenberg-Marquardt) and global approximation using splines, solving many of the drawbacks inherent to the Van Cittert and Fourier transform based deconvolution methods. The deconvolution routine can be run on a personal computer. The application of this method goes beyond the electron spectroscopies and can be considered as a general deconvolution method.

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Summary Abstract: Self-deconvolution in C V V Auger electron spectroscopy

Cited by 6 publications

References 0 publications

Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations

Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV Auger lineshape compared with cluster calculations

Transition density of states (TDOS) of the Si(100)2 × 1 surface derived from the L2,3VV auger lineshape compared with cluster calculations

New approach for correction of distortions in spectral line profiles in Auger electron spectroscopy

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