Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

Shin, Jaemin; Ko, Eunah; Park, June; Kim, Seung Geun; Lee, Jae Woo; Yu, Hyun Yong; Shin, Changhwan

doi:10.1063/1.5030966

Cited by 9 publications

(5 citation statements)

References 18 publications

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“…Recently, PUF units based on volatile TS devices attract great attention due to the intrinsic stochasticity that the device can randomly switch to LRS or stay at HRS under a certain voltage pulse. Ding et al [164] reported a PUF based on the MIT device, where the hardware system contained TS device array and peripheral circuits, as shown in Fig. 11(h).…”

Section: Devicementioning

confidence: 99%

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Volatile threshold switching memristor: An emerging enabler in the AIoT era

Zuo¹,

Fu²,

Zhang³

et al. 2023

J. Semicond.

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With rapid advancement and deep integration of artificial intelligence and the internet-of-things, artificial intelligence of things has emerged as a promising technology changing people’s daily life. Massive growth of data generated from the devices challenges the AIoT systems from information collection, storage, processing and communication. In the review, we introduce volatile threshold switching memristors, which can be roughly classified into three types: metallic conductive filament-based TS devices, amorphous chalcogenide-based ovonic threshold switching devices, and metal-insulator transition based TS devices. They play important roles in high-density storage, energy efficient computing and hardware security for AIoT systems. Firstly, a brief introduction is exhibited to describe the categories (materials and characteristics) of volatile TS devices. And then, switching mechanisms of the three types of TS devices are discussed and systematically summarized. After that, attention is focused on the applications in 3D cross-point memory technology with high storage-density, efficient neuromorphic computing, hardware security (true random number generators and physical unclonable functions), and others (steep subthreshold slope transistor, logic devices, etc.). Finally, the major challenges and future outlook of volatile threshold switching memristors are presented.

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Section: Devicementioning

confidence: 99%

mentioning

confidence: 99%

Volatile threshold switching memristor: An emerging enabler in the AIoT era

Zuo¹,

Fu²,

Zhang³

et al. 2023

J. Semicond.

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show abstract

“…Alternative to charge-transport mechanism or replacement of conventional materials with new ones have been proposed; e.g. negative capacitance field-effect transistor (FET) [5,6], phase-transition FET (Phase FET) [7], and nanoelectromechanical relay (NEM relay) [8], tunnel FET (TFET) [9], impactionization MOS (IMOS) [10], and feedback FET (FBFET) [11]. Especially, the device using a positive feedback mechanism, e.g.…”

Section: Introductionmentioning

confidence: 99%

Understanding of carriers’ kinetic energy in steep-slope P+N+P+N+ feedback field effect transistor

Sung¹,

Shin²

2022

Semicond. Sci. Technol.

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A feedback field-effect transistor (FBFET) takes advantage of the charges accumulated in its potential well and the restriction of carrier flow by its internal potential barrier to achieve superior electrical properties such as a subthreshold swing, threshold voltage, transconductance, and on/off current ratio. However, the device must deal with the modulation of non-uniformity under forward/reverse bias and with completely losing carrier flow control during reverse bias below a certain channel length. In this work, we address these significant issues by focusing on the width of the source/drain and demonstrate the operation of positive feedback in NMOS using only one additional step, resulting in a superior subthreshold swing (~3 mV/decade at 300 K), a low threshold voltage (~ 0.26 V), hysteresis window (0.018 V), and clear saturation region.

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“…Following Moore's law, the footprint of a transistor in as integrated circuit has been aggressively scaled down, resulting in improved performance/power consumption/integrity of integrated chips (ICs). In order to keep the Moore's law alive, various steep switching devices featuring sub-60 mV/decade subthreshold slope (SS) have been proposed, resulting in overcoming the lower limit of SS (i.e., 60 mV/decade at 300 K), a.k.a., Boltzmann tyranny: tunnel field-effect transistor (TFET) [1], phase-transition FET [2,3], feedback FET [4,5], and negative capacitance FET (NCFET) [6]. Despite these advancements in transistors (especially for low-power applications), semiconductor societies have difficulties in realizing the Internet of Things (IoT) owing to the processing of enormous amounts of data [7,8].…”

Section: Introductionmentioning

confidence: 99%

Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications

Moon

Shin

2020

Electronics

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A ferroelectric-gated fin-shaped field effect transistor (Fe-FinFET) is fabricated by connecting a Pb(Zr0.2Ti0.8)O3-based ferroelectric capacitor into the gate electrode of FinFET. The ferroelectric capacitor shows coercive voltages of approximately −1.5 V and 2.25 V. The polarization-induced threshold voltage shift in the Fe-FinFET is investigated by regulating the gate voltage sweep range. When the maximum positive gate to source voltage is varied from 4 V to 2 V with a fixed starting negative gate to source voltage, the threshold voltage during the backward sweep is increased from approximately −0.60 V to 1.04 V. In the case of starting negative gate to source voltage variation from −4 V to −0.5 V with a fixed maximum positive gate to source voltage of 4 V, the threshold voltage during the forward sweep is decreased from 1.66 V to 0.87 V. Those results can be elucidated with polarization domain states. Lastly, it is observed that the threshold voltage is mostly increased/decreased when the positive/negative gate voltage sweep range is smaller/larger than the positive/negative coercive voltage, respectively.

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Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

Cited by 9 publications

References 18 publications

Volatile threshold switching memristor: An emerging enabler in the AIoT era

Volatile threshold switching memristor: An emerging enabler in the AIoT era

Understanding of carriers’ kinetic energy in steep-slope P+N+P+N+ feedback field effect transistor

Understanding of Polarization-Induced Threshold Voltage Shift in Ferroelectric-Gated Field Effect Transistor for Neuromorphic Applications

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