Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Abstract

Superbright green InGaN single quantum well (SQW) structure light-emitting diodes (LEDs) with a luminous intensity of 12 cd were fabricated. The luminous intensity of these green InGaN SQW LEDs (12 cd) was about 100 times higher than that of conventional green GaP LEDs (0.1 cd). The output power, the external quantum efficiency, the peak wavelength and the full width at half-maximum of green SQW LEDs were 3 mW, 6.3%, 520 nm and 30 nm, respectively, at a forward current of 20 mA. The p-AlGaN/InGaN/n-GaN structure of green InGaN SQW LEDs were grown by metalorganic chemical vapor deposition on sapphire subsutrates.

Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures

“…In spite of this high dislocation density, a reasonable quantum efficiency and long lifetime have been obtained. 27,28 However, recent studies by Rosner et al show that electrically active threading dislocations do indeed affect the recombination characteristics in GaN. 29,30 Threading dislocations act as nonradiative recombination centers in GaN and behave as deep level acceptors for n-type GaN.…”

The Promise and Challenge of Solid-State Lighting

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Blue Light Inhibits the Growth of B16 Melanoma Cells

“…21) This was followed by the introduction of practical bluegreen and green LEDs in 1995. 22) Thus, the availability of these newly developed compact blue and green LEDs with very low power consumption and low heat generation, in addition to red LEDs, which have been available for many years, has recently made it possible to develop an apparatus that can emit the three primary colors of the visible spectrum.…”