Superconducting epitaxial $$\hbox {YBa}_{2}\hbox {Cu}_{3}\hbox {O}_{7-\delta }$$ YBa 2 Cu 3 O 7

Abstract

Thin films of optimally doped(001)-oriented YBa 2 Cu 3 O 7−δ are epitaxially integrated on silicon(001) through growth on a single crystalline SrTiO 3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO 3 buffer enables high quality YBa 2 Cu 3 O 7−δ films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick SrTiO 3 buffer, 50-nm thick YBa 2 Cu 3 O 7−δ films that exhibit a transition temperature of ∼93 K, and a narrow transition width (<5 K) are achieved. The integration of single crystalline YBa 2 Cu 3 O 7−δ on Si(001) paves the way for the potential exploration of cuprate materials in a variety of applications.

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

“…Copyright 2018, The Authors, published by AIP Publishing LLC YBCO/STO/Si structure showing c) the entire stack (inset shows a close‐up of the YBCO/STO interface) and d) resistivity–temperature curves showing the critical superconducting temperature in comparison to YBCO grown on STO substrates (insets shows a close‐up of the transition region). Reproduced with permission . Copyright 2018, Springer Nature.…”

“…Ahmadi‐Majlan et al demonstrated the integration of YBa 2 Cu 3 O 7–δ (YBCO) on Si using STO‐buffered (001) Si . The 30 nm thick STO buffer was grown by MBE, upon which a 50 nm thick film of YBCO was grown by PLD.…”