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Thin films of optimally doped(001)-oriented YBa 2 Cu 3 O 7−δ are epitaxially integrated on silicon(001) through growth on a single crystalline SrTiO 3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO 3 buffer enables high quality YBa 2 Cu 3 O 7−δ films exhibiting high transition temperatures to be integrated on Si. For a 30-nm thick SrTiO 3 buffer, 50-nm thick YBa 2 Cu 3 O 7−δ films that exhibit a transition temperature of ∼93 K, and a narrow transition width (<5 K) are achieved. The integration of single crystalline YBa 2 Cu 3 O 7−δ on Si(001) paves the way for the potential exploration of cuprate materials in a variety of applications.

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