“…Other than the vortex transition cell, numerous other types of flux-based memory cells have also been developed previously [10][11][12][13][14]. New memory devices have been developed including based on magnetic junctions [15][16][17][18][19][20], f-Josephson junctions [21], photon modulated cells [22], superconducting frustration bits [23], hybrid magnetic cells [24], adiabatic quantum flux parametron cells [25], cells with 0-and p-junctions [26], integrated ferromagnetic and superconducting junction cells [27,28], spin-torque transfer cells [29].…”