Superconducting nanotransistor based digital logic gates

Lee, Seung‐Beck; Hutchinson, G. D.; Williams, D. A.; Hasko, D. G.; Ahmed, H.

doi:10.1088/0957-4484/14/2/317

Cited by 15 publications

(9 citation statements)

References 8 publications

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“…The nanowire layer acts as a highimpedance, phonon-sensitive switch, while the resistor layer is used to convert electrical energy into Cooper-pair-breaking phonons. Like related low-impedance thermal devices 19,20 , between these two layers is a dielectric thermal spacer that has two purposes: thermally coupling the resistor layer to the nanowire layer, and electrically disconnecting the input (resistor) from the output (nanowire switch). The device has four terminals total, with two of the terminals connected to the resistor and two of the terminals connected to the nanowire ( Fig.…”

Section: High-impedance Superconducting Switchmentioning

confidence: 99%

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

et al. 2019

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A number of current approaches to quantum and neuromorphic computing use superconductors as the basis of their platform or as a measurement component, and will need to operate at cryogenic temperatures. Semiconductor systems are typically proposed as a top-level control in these architectures, with low-temperature passive components and intermediary superconducting electronics acting as the direct interface to the lowest-temperature stages.The architectures, therefore, require a low-power superconductorsemiconductor interface, which is not currently available. Here we report a superconducting switch that is capable of translating low-voltage superconducting inputs directly into semiconductor-compatible (above 1,000 mV) outputs at kelvin-scale temperatures (1 K or 4 K). To illustrate the capabilities in interfacing superconductors and semiconductors, we use it to drive a light-emitting diode (LED) in a photonic integrated circuit, generating photons at 1 K from a low-voltage input and detecting them with an on-chip superconducting single-photon detector. We also characterize our devices timing response (less than 300 ps turn-on, 15 ns turn-off), output 1

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Section: High-impedance Superconducting Switchmentioning

confidence: 99%

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

et al. 2019

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“…In literature, devices that utilize the thermal properties of superconducting weak links to control the supercurrent flows have been reported. 9,12,13 For instance, superconducting weak links are used for realization of a superconducting nanotransistor ͑SNT͒. In a SNT, the active channel is a superconducting weak link and the transistor uses an integrated heater to generate nonequilibrium or "hot" photons, which are injected into the superconducting weak link to control the critical current I c in the channel.…”

Section: Fabrication Of Superconducting Mgb 2 Nanostructures By An Elmentioning

confidence: 99%

Fabrication of superconducting MgB2 nanostructures by an electron beam lithography-based technique

Portesi

Borini

Amato

et al. 2006

Journal of Applied Physics

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In this work, we present the results obtained in fabrication and characterization of magnesium \ud diboride nanowires realized by an electron beam lithography EBL-based method. For fabricating \ud MgB2 thin films, an all in situ technique has been used, based on the coevaporation of B and Mg by \ud means of an e-gun and a resistive heater, respectively. Since the high temperatures required for the \ud fabrication of good quality MgB2 thin films do not allow the nanostructuring approach based on the \ud lift-off technique, we structured the samples combining EBL, optical lithography, and Ar milling. In \ud this way, reproducible nanowires 1 m long have been obtained. To illustrate the impact of the \ud MgB2 film processing on its superconducting properties, we measured the temperature dependence \ud of the resistance on a nanowire and compared it to the original magnesium diboride film. The \ud electrical properties of the films are not degraded as a consequence of the nanostructuring process, \ud so that superconducting nanodevices may be obtained by this method

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“…The empirical observation of the superconducting current quenching proves a highly promising path towards the fabrication of superconducting FET (S-FET) nanodevices, which can simultaneously benefit from the non-dissipating regime characteristic to superconducting materials, and from the electric switching capability of devices controlled by the application of a gate voltage 22 , 23 . Additional prospective applications include the exploitation of the effect in spin-filter Josephson junctions 24 , logic gates 25 , and single-photon detectors 26 .…”

Section: Introductionmentioning

confidence: 99%

Critical current modulation induced by an electric field in superconducting tungsten-carbon nanowires

Orús

Fomin

Córdoba

2021

Sci Rep

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The critical current of a superconducting nanostructure can be suppressed by applying an electric field in its vicinity. This phenomenon is investigated throughout the fabrication and electrical characterization of superconducting tungsten-carbon (W-C) nanostructures grown by Ga$$^+$$ + focused ion beam induced deposition (FIBID). In a 45 nm-wide, 2.7 $$\upmu $$ μ m-long W-C nanowire, an increasing side-gate voltage is found to progressively reduce the critical current of the device, down to a full suppression of the superconducting state below its critical temperature. This modulation is accounted for by the squeezing of the superconducting current by the electric field within a theoretical model based on the Ginzburg–Landau theory, in agreement with experimental data. Compared to electron beam lithography or sputtering, the single-step FIBID approach provides with enhanced patterning flexibility and yields nanodevices with figures of merit comparable to those retrieved in other superconducting materials, including Ti, Nb, and Al. Exhibiting a higher critical temperature than most of other superconductors, in which this phenomenon has been observed, as well as a reduced critical value of the gate voltage required to fully suppress superconductivity, W-C deposits are strong candidates for the fabrication of nanodevices based on the electric field-induced superconductivity modulation.

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Superconducting nanotransistor based digital logic gates

Cited by 15 publications

References 8 publications

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

A superconducting thermal switch with ultrahigh impedance for interfacing superconductors to semiconductors

Fabrication of superconducting MgB2 nanostructures by an electron beam lithography-based technique

Critical current modulation induced by an electric field in superconducting tungsten-carbon nanowires

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