Superconducting photon detectors

Morozov, D.; Casaburi, A.; Hadfield, Robert H.

doi:10.1080/00107514.2022.2043596

Cited by 29 publications

(14 citation statements)

References 209 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Cold Electron Bolometer (CEB) is an ingenious device that overcomes this problem [33], enabling NEP's of 10 −21 WHz −1/2 to be achieved. Also, Superconductor Nanowire Single Photon Detectors (SNSPD) are being used for optical photon counting [34], and Superconducting Qubits for microwave photon detection [35]. The squares in Figure 7 show the noise temperatures of a range of different coherent receiver technologies.…”

Section: Superconducting Devices and Circuitsmentioning

confidence: 99%

Quantum Electronics for Fundamental Physics

Withington¹

2023

Preprint

View full text Add to dashboard Cite

The emerging field of quantum sensors and electronics for fundamental physics is introduced, emphasising the role of thin-film superconducting devices. Although the next generation of ground-based and space-based experiments requires the development of advanced technology across the whole of the electromagnetic spectrum, this article focuses on ultra-low-noise techniques for radio to far-infrared wavelengths, where existing devices fall short of theoretical limits. Passive circuits, detectors and amplifiers are described from classical and quantum perspectives, and the sensitivities of detector-based and amplifier-based instruments discussed. Advances will be achieved through refinements in existing technology, but innovation is essential. The needed developments go beyond engineering and relate to theoretical studies that bring together concepts from quantum information theory, quantum field theory, classical circuit theory, and device physics. This article has been written to introduce graduate-level scientists to quantum sensor physics, rather than as a formal review.In memory of my sister Diana Syder, clinical speech and language specialist, artist and poet, who dedicated her life to helping others communicate.

show abstract

Section: Superconducting Devices and Circuitsmentioning

confidence: 99%

Quantum Electronics for Fundamental Physics

Withington¹

2023

Preprint

View full text Add to dashboard Cite

show abstract

“…spike pulses) operating at multi-GHz speeds is limited by shot noise level (∼20 photons). To overcome this limitation, the use of superconducting-nanowire single-photon neuron-like detectors has been proposed [23], and impressive advances are being made in integrating full neuromorphic circuits based on superconducting electronics [54,55], but these operate at cryogenic temperatures (<10 K) with attendant expenses and limitations [56]. Hence, room-temperature nonlinear highly-sensitive detection solutions capable of receiving low-photon spiking signals are of crucial importance.…”

Section: Miniaturized Light Spiking Receiversmentioning

confidence: 99%

Brain-inspired nanophotonic spike computing: challenges and prospects

Romeira

Adão

Nieder

et al. 2023

Neuromorph. Comput. Eng.

Self Cite

View full text Add to dashboard Cite

Nanophotonic spiking neural networks based on neuron-like excitable subwavelength (submicrometre) devices are of key importance for realizing brain-inspired, power-efficient artificial intelligence (AI) systems with high degree of parallelism and energy efficiency. Despite significant advances in neuromorphic photonics, compact and efficient nanophotonic elements for spiking signal emission and detection, as required for spike-based computation, remain largely unexplored. In this invited perspective, we outline the main challenges, early achievements, and opportunities toward a key-enabling photonic neuro-architecture using III-V/Si integrated spiking nodes based on nanoscale resonant tunnelling diodes (nanoRTDs). We utilize nanoRTDs as nonlinear artificial neurons capable of spiking at high-speeds. We discuss the prospects for monolithic integration of nanoRTDs with nanoscale light-emitting diodes (nanoLEDs), nanolaser diodes (nanoLDs), and nanophotodetectors (nanoPDs) to realize neuron emitter and receiver spiking nodes. Such layout would have a small footprint, fast operation, and low power consumption, all key requirements for efficient optoelectronic spiking operation. We discuss how silicon photonics interconnects, integrated photorefractive interconnects, and 3D waveguide polymeric interconnections can be used for interconnecting the emitter-receiver spiking photonic neural nodes. Finally, using numerical simulations of artificial neuron models, we present spike-based spatio-temporal learning methods for applications in relevant functional AI tasks, such as image pattern recognition, edge detection, and spiking neural networks for inference and learning. Future developments in neuromorphic spiking photonic nanocircuits, as outlined here, will significantly boost the processing and transmission capabilities of next-generation nanophotonic spike-based neuromorphic architectures for energy-efficient AI applications.

show abstract

“…Two classes of devices are used regularly in SWIR single photon detection, InGaAs/InP SPADs 6 and superconducting nanowire single photon detectors (SNSPDs). 7 SNSPDs provide exceptional single photon detection abilities, however these devices are limited by their relatively low operating temperature of approximately 4 K.…”

Section: Introductionmentioning

confidence: 99%

Variation of sidewall passivation on sub-μm selectively grown Ge-on-Si devices towards single photon avalanche detectors

Coughlan

Mirza²,

Kirdoda³

et al. 2023

Optical Components and Materials XX

View full text Add to dashboard Cite

Developing single photon avalanche diodes (SPADs) at short-wave infrared (SWIR) wavelengths beyond 1000 nm has attracted interest lately. Numerous quantum technology applications such as light detection and ranging (LI-DAR), imaging through obscurants and quantum communications require sensitivity in this region. In quantum communications, operation at the telecoms wavelengths of 1310 nm and 1550 nm is essential. Ge-on-Si SPADs offer potential for lower afterpulsing and higher single photon detection efficiencies in the SWIR in comparison with InGaAs/InP SPADs, at a lower cost due to Si foundry compatibility. In this study, Ge-on-Si devices are fabricated on silicon-on-insulator (SOI) substrates, with a separate absorption, charge and multiplication layer (SACM) geometry and a lateral Si multiplication region. This Si foundry compatible process will allow for future integration with Si waveguides and optical fibres. The Ge is selectively grown inside sub-µm wide SiO 2 trenches, reducing the threading dislocation in comparison with bulk Ge; a typical process for integrated Ge detectors.Here we deliberately exposed Ge sidewalls with an etch-back technique, to allow a passivation comparison not normally carried out in selectively grown devices planarised by chemical-mechanical polishing. Reduced dark currents are demonstrated using thermal GeO 2 passivation in comparison to plasma-enhanced chemical-vapourdeposition SiO 2 . The improved passivation performance of GeO 2 is verified by activation energy extraction and density of interface trap (D it ) calculations obtained from temperature-dependent capacitance-voltage (CV) and conductance-voltage (GV) measurements. This highlights the benefit of optimal surface passivation on sub-µm wide selectively grown Ge-on-SOI photodetector devices, potentially critical for waveguide integrated SPADs.

show abstract

Superconducting photon detectors

Cited by 29 publications

References 209 publications

Quantum Electronics for Fundamental Physics

Quantum Electronics for Fundamental Physics

Brain-inspired nanophotonic spike computing: challenges and prospects

Variation of sidewall passivation on sub-μm selectively grown Ge-on-Si devices towards single photon avalanche detectors

Contact Info

Product

Resources

About