Superconducting Triplet Proximity and Josephson Spin Valves

Chirality of Bloch domain walls in exchange biased CoO/Co bilayer seen by waveguide-enhanced neutron spin-flip scattering

“…The exchange bias (EB) effect arises on the interface of antiferromagnetic (AF) and ferromagnetic (F) magnetic phases and leads to the shift of the hysteresis loop on value of H eb varying from several Oersteds to kOe (see review [1]). The effect was discovered 60 years ago, wellstudied to the date [1,2] and is utilized in creation of spin-valves including superconducting devices [3][4][5][6][7][8][9][10][11][12][13][14].…”

Synthesis, Characterization, and Magnetoresistive Properties of the Epitaxial Pd0.96Fe0.04/VN/Pd0.92Fe0.08 Superconducting Spin-Valve Heterostructure

“…The first two take place for collinear configurations of magnetizations, while the last for non-collinear ones. Various designs have been proposed for heterostructures realizing either T c -controlled spin-valves or Josephson spin-valves with the critical current control [ 54 ], some of which were implemented in experiments (see [ 9 , 10 , 25 , 55 , 56 , 57 , 58 ]).…”

Proximity effect in [Nb(1.5 nm)/Fe(x)]10/Nb(50 nm) superconductor/ferromagnet heterostructures

“…Superconductor(S)/ferromagnet(F) heterostructures are intensively studied systems, which are interesting for fundamental physics due to a big number of predicted and detected phenom-ena such as the appearance of non-uniform superconducting states (see reviews [1][2][3]). Among these phenomena are π-Josephson junctions [4][5][6][7] with a π-phase difference of super-conducting correlations between two neighboring interfaces, long-range triplet superconductivity [8][9][10][11][12][13][14][15][16] generated in S/F systems with a non-collinear (NC) magnetic configuration of the F system, and re-entrant superconductivity as evidence of nonuniform LOFF-states [17][18][19][20]. Apart from the interest in basic science, the proximity effect in S/F structures has great technological importance for the creation of spintronics devices, where the transport properties of the structure are controlled via the manipulation of the magnetic order in the F subsystem [21][22][23][24][25][26].…”