2019
DOI: 10.1016/j.scib.2019.03.017
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Superconductivity above 28 K in single unit cell FeSe films interfaced with GaO2− layer on NdGaO3(1 1 0)

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Cited by 11 publications
(4 citation statements)
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“…Undoped bulk FeSe is superconducting below 8 K 11 , above which only nematicity but no long-range magnetic order is present at ambient pressure [12][13][14] , although strong spin fluctuations have been found by inelastic neutron scattering 15 . Monolayer FeSe shows strongly enhanced superconductivity with T c up to 70 K when epitaxially grown on SrTiO 3 (STO) [16][17][18][19][20] and other oxides [21][22][23][24][25][26][27] . Several mechanisms have been related to this emerging superconducting phase 28 , including spin fluctuations [29][30][31] , electron doping [32][33][34][35] , and electron-phonon coupling [36][37][38][39][40][41] .…”
mentioning
confidence: 99%
“…Undoped bulk FeSe is superconducting below 8 K 11 , above which only nematicity but no long-range magnetic order is present at ambient pressure [12][13][14] , although strong spin fluctuations have been found by inelastic neutron scattering 15 . Monolayer FeSe shows strongly enhanced superconductivity with T c up to 70 K when epitaxially grown on SrTiO 3 (STO) [16][17][18][19][20] and other oxides [21][22][23][24][25][26][27] . Several mechanisms have been related to this emerging superconducting phase 28 , including spin fluctuations [29][30][31] , electron doping [32][33][34][35] , and electron-phonon coupling [36][37][38][39][40][41] .…”
mentioning
confidence: 99%
“…It is worthy pointing out the universality of T c enhancement when 1UC FeSe grown on various oxide substrates with high energy bonds like Ti-O bonds or other. Such substrates include BTO(001) [74], STO (110) [115,116], anatase TiO 2 (001) [117], rutile TiO 2 (001) [118] and GaO 2−δ [119]. High-energy F-K phonons present also in a variety of oxide substrates with similar energies as shown in Figure 7(f ).…”
Section: The Interacting Phonons In Stomentioning
confidence: 83%
“…The first layer of FeSe and the intermediate layer form a sharp interface, indicating that FeSe can be grown well on the VO x -terminated SVO. Our results provide a new interfacial system of 1 UC FeSe grown on non-TiO x -terminated oxides after FeSe/MgO, FeSe/NdGaO 3 , and FeSe/LaFeO 3 (FeSe/LFO) …”
mentioning
confidence: 89%