Superconductivity at Interfaces in Cuprate‐Manganite Superlattices

Abstract

One of the unsolved problems for using high-T c superconducting cuprates for spintronic applications are the short coherence lengths of Cooper pairs in oxides (a few Å), which requires atomically sharp and defect-free interfaces. This research demonstrates the presence of high-T c superconducting La 1.84 Sr 0.16 CuO 4 in direct proximity to SrLaMnO 4 and provides evidence for the sharpness of interfaces between the cuprate and the manganite layers at the atomic scale. These findings shed light on the impact of the chemical potential at the interface of distinct materials on highly sensitive physical properties, such as superconductivity. Additionally, this results show the high stability of ultrathin layers from the same K 2 NiF 4 -type family, specifically one unit cell of Sr 2−x La x MnO 4 and three unit cells of La 1.84 Sr 0.16 CuO 4 . This work advances both the fundamental understanding of the proximity region between superconducting cuprates and manganite phases and the potential use of oxide-based materials in quantum computing.

Offcut Substrate-Induced Defect Trapping at Step Edges

“…We used specific offcut substrates, ensuring uniform terrace widths, and consequently reducing the distances between step edges resulting in a high density of step edges . Ozone-assisted molecular beam epitaxy (MBE) guided by reflection high-energy electron diffraction (RHEED) stands as the forefront technique, ensuring high quality complex oxide heterostructures. , This approach not only achieves exceptional film quality but also empowers precise control over the growth of individual unit cells. , Complex oxides have established themselves as record holders across an array of properties, including high- T C superconductivity, − colossal magnetoresistance, and multiferroicity, underscoring their exceptional versatility and performance …”

“…Figure , due to the structural match between LSCO and LaSrMnO 4 highlight the potential for future in-plane Josephson junctions. This potential arises from the notably greater in-plane coherence length of Cooper pairs in oxide high- T C materials, approximating 2.4 nm, significantly surpassing the corresponding out-of-plane coherence length, approximating 0.3 nm …”

“…This potential arises from the notably greater in-plane coherence length of Cooper pairs in oxide high-T C materials, approximating 2.4 nm, significantly surpassing the corresponding out-of-plane coherence length, approximating 0.3 nm. 18 Our results indicate another opportunity to explore new research domains, encompassing the stabilization of highpressure phases at step edges and the formation of cation diffusion channels. Adopting offcut substrates to thin film technology will pave the way for novel in-plane device possibilities in spintronics and electronics.…”