Supercritical CO/sub 2/ clean with novel solution for 65 nm and beyond BEOL performance improvement

Tseng, Wei-Hsiung; Yang, Chi-Ming; Wu, Wenjing; Wang, C.Y.; Hu, Jimmy; Hsiung, C.H.; Lin, Yi; Bao, T.I.; Yang, Jehoon; Shieh, Jiann; Jeng, Chi; Lin, J.C.; Huang, Ian; Chen, H.C.; Lo, H.; Wang, J.; Yu, C. H.; Liang, Mong–Song

doi:10.1109/iitc.2005.1499964

Cited by 1 publication

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“…Recently, supercritical CO2 has been tried to use for cleaning processes in semiconductor manufacturing because supercritical CO2 is easy to infiltrate into deep microholes and to dry owing to its zero surface tension, high diffusivity and large solubility of photoresist residue. Tseng et al (2005) have used supercritical CO2 with special co-solvents to clean residue after plasma O2 (6) . Myneni and Hess (2003) used tetramethyl ammonium hydroxide (TMAH) mixtures containing methanol and water as co-solvents with supercritical CO2 (7) .…”

Section: Introductionmentioning

confidence: 99%

Supercritical CO2-Pulse Cleaning in Deep Microholes

Ota

Tsutsumi

2008

JAMDSM

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A novel supercritical cleaning process was proposed for removing contamination in high aspect ratio trenches and microholes of highly integrated semiconductor devices. The supercritical CO2-pulse cleaning with the periodic pressure swing of supercritical fluid between subcritical and supercritical conditions was conducted for removing particles in microholes of fabricated model structures. The microhole depth is 2.0 µm with microhole sizes ranging from 0.2 µm to 1.6 µm. The effects of microhole size on particle removal were investigated by means of non-destructive observation of high aspect ratio model structures with an optical microscope and SEM. The supercritical CO2-pulse cleaning efficiently removed more than 50 nm fine particles from the deep microholes owing to its drastic changes in density near the critical point by depressurization of the supercritical fluid.

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