2004
DOI: 10.1149/2.f07044if
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Superfilling and the Curvature Enhanced Accelerator Coverage Mechanism

Abstract: State-of-the-art manufacturing of semiconductor devices involves the electrodeposition of copper for on-chip wiring of integrated circuits.

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Cited by 35 publications
(35 citation statements)
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“…1,2 For submicrometer features, superconformal growth involves competitive adsorption between polyethers (e.g., poly(ethylene glycol) (PEG) and/or its derivatives) that suppress metal deposition and sulfonate-terminated alkyl disulfides and/or related thiols that accelerate Cu deposition. 3,4 For larger-scale features, such as TSV, extreme bottom-up filling can occur due to disruption of the polymer suppressor layer by positive feedback with the metal deposition reaction itself. 5−8 In prototypical acidic CuSO 4 electrolytes, Cl − is an essential additive influencing the co-adsorption and operation of both polyether inhibitors and sulfonate-terminated alkyl disulfide accelerator species.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…1,2 For submicrometer features, superconformal growth involves competitive adsorption between polyethers (e.g., poly(ethylene glycol) (PEG) and/or its derivatives) that suppress metal deposition and sulfonate-terminated alkyl disulfides and/or related thiols that accelerate Cu deposition. 3,4 For larger-scale features, such as TSV, extreme bottom-up filling can occur due to disruption of the polymer suppressor layer by positive feedback with the metal deposition reaction itself. 5−8 In prototypical acidic CuSO 4 electrolytes, Cl − is an essential additive influencing the co-adsorption and operation of both polyether inhibitors and sulfonate-terminated alkyl disulfide accelerator species.…”
Section: ■ Introductionmentioning
confidence: 99%
“…5−8 In prototypical acidic CuSO 4 electrolytes, Cl − is an essential additive influencing the co-adsorption and operation of both polyether inhibitors and sulfonate-terminated alkyl disulfide accelerator species. 3−20 In situ scanning tunneling microscopy (STM) and surface X-ray scattering (SXS) measurements have revealed a great deal about the structure and step dynamics associated with potential-dependent phase transitions of the chemisorbed anions, SO 4 2− and Cl − , on low-index Cu surfaces. 21−31 At technically relevant concentrations, Cl − displaces SO 4 2− from the Cu surface and facilitates an increase in the rate of the Cu 2+ /Cu + inner sphere electron-transfer reaction.…”
Section: ■ Introductionmentioning
confidence: 99%
“…To date, most of the site-selective Li deposition approaches have been based on the above idea: that is, modifying the chemistry of substrates. However, less attention has been paid to the effect of local geometry of substrates, which can also influence the metal electrodeposition behaviors. , In fact, on a nonplanar surface, concave structures such as pores and cavities are expected to be the preferred nucleation sites for metals. Therefore, the geometry effect is speculated to play a role in site-controlled Li deposition for achieving dendrite-free anodes. Nevertheless, little work has focused on this aspect.…”
mentioning
confidence: 99%
“…NIST developed a quantitative process model on this basis-curvature-enhanced accelerator coverage (CEAC)that has guided development [658]. The basic idea is that (a) the growth velocity of the infilling copper is proportional to the local accelerator, or catalyst, coverage, and (b) the catalyst remains segregated at the metal-electrolyte interface during metal deposition.…”
Section: Part F Copper Plating In Microelectronicsmentioning
confidence: 99%