Supergrains produced by lateral growth using Joule-heating induced crystallization without artificial control

Hong, Won-Eui; Chung, Jang-Kyun; Kim, Dong-Hyun; Park, Seung Ho; Ro, Jae-Sang

doi:10.1063/1.3253704

Cited by 16 publications

(5 citation statements)

References 10 publications

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“…It can be seen that the annealing is focused in the predetermined channel regions. Self-heating occurs during the electrical activation process due to the high drain current, increasing the temperature of the channel region 15 16 17 .…”

Section: Resultsmentioning

confidence: 99%

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

Lee

Chang

Tak

et al. 2016

Sci Rep

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A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. In this ‘electrical activation’, the effects of annealing under bias are selectively focused in the channel region. Therefore, electrical activation can be an effective method for lower backplane processing temperatures from 280 °C to 130 °C. Devices fabricated with this method exhibit equivalent electrical properties to those of conventionally-fabricated samples. These results are analyzed electrically and thermodynamically using infrared microthermography. Various bias voltages are applied to the gate, source, and drain electrodes while samples are annealed at 130 °C for 1 hour. Without conventional high temperature annealing or electrical activation, current-voltage curves do not show transfer characteristics. However, electrically activated a-IGZO TFTs show superior electrical characteristics, comparable to the reference TFTs annealed at 280 °C for 1 hour. This effect is a result of the lower activation energy, and efficient transfer of electrical and thermal energy to a-IGZO TFTs. With this approach, superior low-temperature a-IGZO TFTs are fabricated successfully.

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Section: Resultsmentioning

confidence: 99%

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

Lee

Chang

Tak

et al. 2016

Sci Rep

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“…They crystallized 50-nm-thick a-Si films via 200-nm-thick SiO 2 intermediate layers by applying an electric field to Cr strips with a power density of ~10 5 W/cm 2 . Extending this concept further, we have developed a crystallization method for a-Si films called Jouleheating-induced crystallization (JIC) (11)(12)(13). In this method, an electric field is applied to a conductive layer above or beneath a-Si films to induce Joule heating that in turn leads to crystallization of the films.…”

Section: Introductionmentioning

confidence: 99%

Microsecond Crystallization of Amorphous Silicon Films on Glass Substrates by Joule Heating

Hong

2016

ECS Trans.

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Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films was conducted by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. The phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. We devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. JIC-processed poly-Si thin-film transistors were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs.

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“…This two-step approach enables the decoupling of the doping/profile type and the final layer thickness from the initial properties of the formed seed layer like its grain size and preferential orientation [1]. Other alternative one-step techniques were also investigated like thermal solid phase crystallization (SPC) [2], which is the only technology that had already been matured for industrial production [3], laser induced crystallization (LIC) [4], electron beam crystallization [5], joule heating [6]; the techniques which enable the recrystallization of a deposited Si layer that can directly be used as the base layer in the cell processing [1]. In this work we used the AIC based Poly-Si as our base layer to make use of the advantage of the two-step process approach which had led to an efficiency of 8% obtained by imec, Belgium [7].…”

Section: Introductionmentioning

confidence: 99%

Integration of a 2-D Periodic Nanopattern Into Thin-Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography

Abdo

Trompoukis

Deckers

et al. 2014

IEEE J. Photovoltaics

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The integration of two-dimensional (2D) periodic nanopattern defined by nanoimprint lithography and dry etching into aluminum induced crystallization (AIC) based polycrystalline silicon (Poly-Si) thin film solar cells is investigated experimentally. Compared to the unpatterned cell an increase of 6% in the light absorption has been achieved thanks to the nanopattern which, in turn, increased the short circuit current from 20.6 mA/cm2 to 23.8 mA/cm2. The efficiency, on the other hand, has limitedly increased from 6.4% to 6.7%. We show using the transfer length method (TLM) that the surface topography modification caused by the nanopattern has increased the sheet resistance of the antireflection coating (ARC) layer as well as the contact resistance between the ARC layer and the emitter front contacts. This, in turn, resulted in increased series resistance of the nanopatterned cell which has translated into a decreased fill factor, explaining the limited increase in efficiency.

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Supergrains produced by lateral growth using Joule-heating induced crystallization without artificial control

Cited by 16 publications

References 10 publications

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors

Microsecond Crystallization of Amorphous Silicon Films on Glass Substrates by Joule Heating

Integration of a 2-D Periodic Nanopattern Into Thin-Film Polycrystalline Silicon Solar Cells by Nanoimprint Lithography

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