Superhigh-Rate Epitaxial Silicon Thick Film Deposition from Trichlorosilane by Mesoplasma Chemical Vapor Deposition

Wu, Sudong; Kambara, Makoto; Yoshida, Toyonobu

doi:10.1007/s11090-013-9439-7

Cited by 19 publications

(19 citation statements)

References 28 publications

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“…In our former study, 21) we reported that the deposition rate of Si films varies with H 2 flow rate ( ) and input power ( ), as shown in Figs. 3 and 4, respectively.…”

Section: Resultsmentioning

confidence: 93%

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Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy

Inoue

Kambara

et al. 2013

Jpn. J. Appl. Phys.

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The absolute density of the first excited state atomic hydrogen H(n=2) in an Ar/H2 mixture is measured in-situ by cavity ring-down spectroscopy under mesoplasma condition. The H(n=2) atom density is determined to be in the range of 1010–1011 cm-3 and the formation of H(n=2) having such high density is identified to be predominantly due to the associative charge exchange/dissociative recombination reactions, similar to dc-arc plasma expanding into a low-pressure vessel that have been previously reported. The local H(n=2) atom density is found to have a linear variation with deposition rate, which indicates that high H(n=2) atom density have a direct role in the reduction of SiHCl3 to Si.

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“…In our former study, 21) we reported that the deposition rate of Si films varies with H 2 flow rate ( ) and input power ( ), as shown in Figs. 3 and 4, respectively.…”

Section: Resultsmentioning

confidence: 93%

“…The detection zone for the H(n ¼ 2) atoms was at a distance of 60 mm from the plasma torch exit, which is 30 mm below the substrate in the deposition experiments. 21) The H(n ¼ 2) atom density was measured via the Balmer-transition at 486.1 nm in an Ar/H 2 plasma.…”

Section: Experimental Methodsmentioning

confidence: 99%

Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy

Inoue

Kambara

et al. 2013

Jpn. J. Appl. Phys.

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“…The substrate temperature was controlled in the range of 700 ~ 900 ˚C during deposition, independent of the plasma conditions. The detail of the deposition process can be found elsewhere [10]. The production yield was estimated by weighing the Si films deposited on graphite substrate with a diameter of 98 mm, which was confirmed to be the same with that deposited on Si substrate by measuring the film thickness distribution and the weight of the Si films deposited on Si substrate.…”

Section: Methodsmentioning

confidence: 96%

Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl₃ by Mesoplasma Chemical Vapor Deposition

Kambara²,

Yoshida³

2014

Proceedings of the 12th Asia Pacific Physics Conference (APPC12)

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Epitaxial Si thick films have been deposited by mesoplasma chemical vapor deposition with SiHCl 3 -H 2 -Ar gas mixtures at high efficiency. Addition of hydrogen has been revealed to increase the deposition efficiency by removing Cl as a form of HCl. It also promotes the surface migration of deposition precursors for the attainment of epitaxial Si films. As a result, epitaxial Si films with a production yield of about 60% and a deposition rate of 430 nm/s were deposited at a H 2 /TCS ratio of 2-3.

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“…In contrast, mesoplasma chemical vapor deposition (MPCVD) can produce Si epitaxial films at a high rate of about 700 nm s −1 and a yield exceeding 50% from TCS. The high quality of MPCVD films resulted in a Hall mobility of about 70% of that of the p-type Si wafer [5]. It is considered that the simultaneous attainment of these characteristics is attributed to its unique deposition process, which includes the formation of nanoclusters as deposition precursors and the high degree of non-equilibrium during epitaxial growth [6].…”

Section: Introductionmentioning

confidence: 99%

High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition

Sawada

Ichimaru

et al. 2014

Science and Technology of Advanced Materials

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Homoepitaxial Si films have been deposited at a high rate of 200 nm s−1 over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1–0.3 nm (1 × 1 μm2) and a Hall mobility of ∼240 cm2 V−1 s−1. The results suggested that under the MPCVD the deposition precursors formed at the plasma edge could be small enough not to influence either epitaxial film structure or the film quality provided the substrate temperature is maintained above 500 °C.

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Superhigh-Rate Epitaxial Silicon Thick Film Deposition from Trichlorosilane by Mesoplasma Chemical Vapor Deposition

Cited by 19 publications

References 28 publications

Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy

Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy

Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl₃ by Mesoplasma Chemical Vapor Deposition

High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition

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Superhigh-Rate Epitaxial Silicon Thick Film Deposition from Trichlorosilane by Mesoplasma Chemical Vapor Deposition

Cited by 19 publications

References 28 publications

Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy

Cavity Ring-Down Spectroscopy Measurement of H(n=2) Density in Mesoplasma for Fast-Rate Silicon Epitaxy

Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl3 by Mesoplasma Chemical Vapor Deposition

High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition

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Enhanced Deposition Efficiency of Epitaxial Si Film from SiHCl₃ by Mesoplasma Chemical Vapor Deposition