Superior bipolar resistive switching behaviors of solution-processed HfAlO_xthin film for nonvolatile memory applications

Abstract

We report on the bipolar resistive switching behavior and uniform cumulative distribution of set/reset voltage observed from the resistive random access memory (ReRAM) device based on a solution-processed HfAlO x thin film. The HfAlO x thin film was spin-coated from a mixture of HfO x and AlO x solutions at 1 : 1 ratio. The dominant conduction mechanism of a solution-processed HfAlO x thin film is found to be the ohmic behavior in the low-resistance state (LRS) and high-resistance state (HRS) in the low-voltage region, whereas the Poole-Frenkel emission is dominant in the HRS in the high-voltage region. Outstanding reliability in terms of endurance and retention characteristics was achieved. The solution-processed HfAlO x thin film can be a promising candidate for the application in ReRAM devices with glass or flexible substrates.

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

“…[235] However, for certain active metals such as Al, a thick interfacial layer of oxide (AlO x ) can form on both electrodes, which leads to significant degradation during resistive switching operation by affecting the resistive switching layer's stoichiometry. [171] Asymmetrical devices are composed by two different electrodes and can have inert-inert (e.g., Pt-Au [265] ), inert-active (e.g., Pt-Al, [80] Pt-Ti, [266] Au-Al, [197] Pt-Ag, [87] Au-Ag, [156] and TaN-Cu [226] ), or (noninert)-active (e.g., Cu-Al, [177] Cu-Ag, [199] Ti-Cu, W-Al, [267] LNO-Al, [149] FTO-Ti, [73] FTO-Al, [201] ATO-Cu, [143] ITO-Ag, [192] ITO-Al, [148] and ITO-Ti [81] ) electrode structures. Figure 14 shows the reported metal oxide S-RRAMs with different configurations, symmetric and asymmetric structures.…”

Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type doping

“…2 Moreover, these techniques are typically slow and need high thermal budget, which can increase fabrication costs. 3 Thus, developing a simple and cost-effective processing method is crucially essential for further progress toward large-scale manufacture of electronic devices.…”