Superior photoresponse MIS Schottky barrier diodes with nanoporous:Sn–WO₃ films for ultraviolet photodetector application

Abstract

Nanoporous:Sn–WO3 film based metal–insulator–semiconductor type Schottky diodes exhibit ultra-high responsivity with higher quantum efficiency and detectivity.

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

“…Next step in the cleaning process, substrate was cleaned using piranha solution (H 2 SO 4 -H 2 O 2 ) (2:1) to eliminate inorganic/organic residues on Si substrate. Finally, substrates were immersed in (HF: H 2 O) solution (1:10 ratio) for 10 min after that washed with DI water to eradicate the native SiO 2 layer [ 33 ]. As synthesized (50 mg) nanoparticle were dispersed in solution of cyclohexane (1 mL) and oleylamine (20 µL) to form ink type coating solution.…”

A Review on the Properties and Applications of WO3 Nanostructure−Based Optical and Electronic Devices

“…The instrument details and deposition conditions of the metal contacts were mentioned in their previous work [ 36 , 37 ]. The Sn-WO 3 /p-Si diode showed a positive light response of high reverse saturation current under illumination [ 38 ]. As the concentration increases, the detection capability of the interface layer also increases.…”

“… ( a ) I-V characteristics Cu/nanoporous: Sn–WO 3 /p-Si SBDs fabricated with different concentrations ( b ) Energy band diagram of the Cu/nanoporous:Sn–WO 3 /p-Si (MIS) type diode. Reproduced or adapted from [ 38 ]. …”

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

“…The devices can be thought of for photodetector and photodiode applications due to having light induced currents for increasing light power intensity. [ 59,60 ] The current values are higher at forward biases than reverse biases even if light illumination conditions. Thus, the devices can be employed in photodiode applications.…”