Superiority of common-base to common-emitter heterojunction bipolar transistors

Qin, Guoxuan; Wang, Guogong; McCaughan, L.; Ma, Zhenqiang

doi:10.1063/1.3491797

Cited by 5 publications

(4 citation statements)

References 8 publications

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“…Additionally, the high gain of the CB topology at mm-wave frequencies makes it a suitable core for PA cells. The power performance superiority of the CB configuration over CE DHBTs appears to confirm the analysis of Qin et al [23]. Whereas InP/GaAsSb CB DHBTs perform better than CE devices for low P IN (and conversely for high P IN , as for SiGe HBTs in [23]), InP/GaInAsSb CB DHBTs are superior to CE devices for all input power levels (Fig.…”

Section: Large-signal Performancesupporting

confidence: 81%

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

et al. 2022

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We report the 94 GHz large-signal load-pull performance of (0.3 × 9) μm 2 InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) in the common-emitter (CE) and common-base (CB) configurations. Both configurations were implemented side-by-side on either 20-nm-thick graded GaAsSbor GaInAsSb-base layers. A measured record saturated output power P OUT,SAT = 14.5 dBm with a corresponding power density 10.4 mW/μm 2 were achieved in the GaInAsSb-base CB configuration. The performance follows from i) the higher power gain in the CB topology and, ii) the superior BV CEO and BV CBO breakdown voltages obtained with the quaternary base which allow degradation-free operation at higher voltages. Load-pull contours show a combination of high output power and power gain in the proximity of 50 for a wide range of load impedances. In contrast, CB InP/GaAsSb DHBTs deliver P OUT,SAT = 10.6 dBm and 4.3 mW/μm 2 . For all devices considered here, CB operation improves transistor robustness against high-power device degradation. The present work provides the first report on the power performance of quaternary InP/GaInAsSb DHBTs in CE/CB topologies, with comparison to ternary InP/GaAsSb DHBTs.INDEX TERMS InP/Ga(In)AsSb, double heterojunction bipolar transistors (DHBTs), common-emitter (CE), common-base (CB), load-pull measurements, maximum output power, power gain, power density.This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination.

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Section: Large-signal Performancesupporting

confidence: 81%

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

et al. 2022

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“…𝑖𝑓 𝑖𝑠𝑛′𝑡 𝑓𝑖𝑛𝑎𝑙 𝑠𝑡𝑎𝑔𝑒 (7) 𝑅 =𝑅 ‖𝑅 ‖ ℎ + (1+ℎ ) •𝑅 ‖𝑅 with resistive divider in base (8) 𝑅 =𝑅 ‖ ℎ + (1+ℎ )𝑅 with resistance in base (9) The determination of the output resistance in dynamical regime, R0, of the common collector connection is based on relations (10) and (11) for both cases presented previously.…”

Section: 𝑅 = 𝑅 𝑖𝑓 𝑖𝑡 𝑖𝑠 𝑡ℎ𝑒 𝑓𝑖𝑛𝑎𝑙 𝑠𝑡𝑎𝑔𝑒 𝑅mentioning

confidence: 99%

“…Because there is a need in technology to amplify electrical signals, i.e. to obtain on a load circuit higher power signals but identical in form of time variation with those of low power available, amplifiers are used [9][10][11][12][13][14]. Electronic amplifiers are constructed using bipolar or field effect transistors, either as discrete circuits or as integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

Using the LabVIEW Simulation Program to Design and Determine the Characteristics of the Amplifiers

Cuntan¹,

Pânoiu²,

Pănoiu³

et al. 2023

Preprint

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Because of the large number of parameters that interact in their function, determining dynamic regime parameters as well as the mode of function of amplifying stages is an extremely complex problem. This paper describes a LabVIEW application for studying the functioning of an ampli-fier in various connections. The user selects the generator's parameters, the type of connection and its parameters, as well as the electric charge characteristics. The application can determine both the stage characteristics and the Bode characteristics. The amplifier's stability zone, as well as its gain and phase, are determined based on these characteristics. An important advantage of this application is that the design of the amplifier stage can be made starting from some param-eters that the amplifier can establish, from which the values of components can be determined. In order to validate the simulation results using the LabVIEW application, a specialized program Multisim was used, as well as experimental measurements using the Electronics Explorer Board. Both Multisim and Electronics Explorer Board can determine Bode characteristics. In both simu-lations and experimental amplifiers, the same schemes with the same transistor was used. The application can be used for educational purposes as well as to design the amplifier's stage to achieve specific parameters.

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“…Because there is a need in technology to amplify electrical signals, i.e., to obtain on a load circuit higher power signals that are identical in terms of time variation to those of low power available, amplifiers are used [9][10][11][12][13][14]. Electronic amplifiers are constructed using bipolar or field effect transistors, either as discrete circuits or as integrated circuits.…”

Section: Introductionmentioning

confidence: 99%

Using the LabVIEW Simulation Program to Design and Determine the Characteristics of Amplifiers

Cuntan,

Panoiu,

Panoiu

et al. 2024

Chips

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Because of the large number of parameters that interact in amplifier functions, determining dynamic regime parameters as well as the mode of function of amplifier stages is an extremely complex problem. This paper describes a LabVIEW application for studying the functioning of an amplifier in various connections. The user selects the generator’s parameters, the type of connection and its parameters, as well as the load circuit characteristics. The application can determine both the stage characteristics and the Bode characteristics. The amplifier’s stability zone, as well as its gain and phase, are determined based on these characteristics. An important advantage of this application is that the design of the amplifier stage can be created starting from some parameters that the amplifier can establish, from which the values of components can be determined. In order to validate the simulation results from the LabVIEW application, the specialized program Multisim was used, as well as experimental measurements using the Electronics Explorer Board. Both Multisim and Electronics Explorer Board can determine Bode characteristics. In both simulations and experimental amplifiers, the same schemes with the same transistor were used. The application can be used for educational purposes as well as to design an amplifier’s stage to achieve specific parameters.

show abstract

Superiority of common-base to common-emitter heterojunction bipolar transistors

Cited by 5 publications

References 8 publications

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

Using the LabVIEW Simulation Program to Design and Determine the Characteristics of the Amplifiers

Using the LabVIEW Simulation Program to Design and Determine the Characteristics of Amplifiers

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Superiority of common-base to common-emitter heterojunction bipolar transistors

Cited by 5 publications

References 8 publications

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz

Using the LabVIEW Simulation Program to Design and Determine the Characteristics of the Amplifiers

Using the LabVIEW Simulation Program to Design and Determine the Characteristics of Amplifiers

Contact Info

Product

Resources

About

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz

High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz