Superlattice-like SnSb<sub>4</sub>/Ge thin films for ultra-high speed phase change memory applications

He, Zifang; Wu, Pengzhi; Liu, Ruirui; Zhai, Jiwei; Lai, Tianshu; Song, Sannian; Zhang, Song

doi:10.1039/c5ce02340h

Cited by 22 publications

(11 citation statements)

References 24 publications

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“…The total durations of the crystallization and amorphization processes of the [S4(30)− S1(20)] 1 thin film are 4.9 and 3.7 ns, respectively, both being much faster than those of GST (17.7 ns for crystallization and 16.5 ns for amorphization). 17 This fast phase change speed of the [S4(30)−S1(20)] 1 thin film has also been realized in the device test, as demonstrated in Figure 1d. The PCM cells were fabricated using 0.18 μm CMOS technology.…”

Section: Resultssupporting

confidence: 62%

Multilayer SnSb₄–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

Liu

Zhou

Zhai

et al. 2017

ACS Appl. Mater. Interfaces

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A multilayer thin film, comprising two different phase change material (PCM) components alternatively deposited, provides an effective means to tune and leverage good properties of its components, promising a new route toward high-performance PCMs. The present study systematically investigated the SnSb-SbSe multilayer thin film as a potential PCM, combining experiments and first-principles calculations, and demonstrated that these multilayer thin films exhibit good electrical resistivity, robust thermal stability, and superior phase change speed. In particular, the potential operating temperature for 10 years is shown to be 122.0 °C and the phase change speed reaches 5 ns in the device test. The good thermal stability of the multilayer thin film is shown to come from the formation of the SbSe phase, whereas the fast phase change speed can be attributed to the formation of vacancies and a SbSe metastable phase. It is also demonstrated that the SbSe metastable phase contributes to further enhancing the electrical resistivity of the crystalline state and the thermal stability of the amorphous state, being vital to determining the properties of the multilayer SnSb-SbSe thin film.

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Section: Resultssupporting

confidence: 62%

Multilayer SnSb₄–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

Liu

Zhou

Zhai

et al. 2017

ACS Appl. Mater. Interfaces

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“…The difference for E g is related to the carrier concentration. Since the carrier density inside the semiconductors is proportional to

\exp false(- E_{g} / 2 K T false)

[13]. A broad band gap will increase the obstacle of carrier transition, leading to the reduction of carriers.…”

Section: Resultsmentioning

confidence: 99%

“…However, some aspects limit its application in PCM, such as the low activation energy (2.24 eV for the phase change from the crystal to rock salt structure) [8, 9], the great density change (6.8% from amorphous to NaCl‐type crystal state) [10], high RESET current (>1 mA) [11] and the long crystallisation time (∼100 ns) [11]. It is reported that Sb‐rich phase change material has fast switching speed due to its growth‐dominated crystallisation mechanism, such as Ge–Sb [12], Sn–Sb [13] and Cu–Sb–Te [14]. At the same time, Te element is harmful to semiconductor technology due to its volatilisation [15].…”

Section: Introductionmentioning

confidence: 99%

Superlattice‐like Zn ₁₅ Sb ₈₅ /Ga ₃₀ Sb ₇₀ thin films for low power and ultrafast phase change memory application

Zhang

Chou

et al. 2019

Micro & Nano Letters

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In this study, the amorphous-to-crystalline transitions of superlattice-like (SLL) Zn 15 Sb 85 /Ga 30 Sb 70 thin films were investigated by in situ film resistance measurement. The thermal stability, resistance and band gap of the SLL Zn 15 Sb 85 /Ga 30 Sb 70 thin film perform well. The data retention temperature for 10 years increases from 177°C of [Zn 15 Sb 85 7/Ga 30 Sb 70 3] to 220°C of [Zn 15 Sb 85 2/Ga 30 Sb 70 8]. The X-ray diffraction patterns show the presence of a large amount of Sb phase in the Zn 15 Sb 85 /Ga 30 Sb 70 thin films, which causes a rapid phase transition. The surface morphology is observed by atomic force microscopy, which indicates that the thickness of Ga 30 Sb 70 in the SLL thin films can affect the grain size and inhibit the crystallisation process. For the Zn 15 Sb 85 /Ga 30 Sb 70 thin films, an ultra-short switching time of around 2 ns is achieved. These results indicate that the SLL Zn 15 Sb 85 /Ga 30 Sb 70 thin films have a promised application in phase change memory.

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“…However, the phase-change speed of GST is relatively low, and its thermal stability, especially amorphous stability, is unsatisfactory. 8,9 Superlattice-like (SLL) PCM materials have attracted much attention in recent years because of better thermal stability 10 and rapid crystallization speed 11 because of their modulated multilayer structure. The GeTe/Sb 2 Te 3 SLL structure-based interfacial phase-change memory device showed improved cycle lifetimes and switching speeds.…”

Section: Introductionmentioning

confidence: 99%

“…Chalcogenides such as Ge–Sb–Te-based compounds are typical materials in rewritable optical media and in nonvolatile electronic memory devices, − with Ge 2 Sb 2 Te 5 (GST) being one of the most widely used compositions. However, the phase-change speed of GST is relatively low, and its thermal stability, especially amorphous stability, is unsatisfactory. , Superlattice-like (SLL) PCM materials have attracted much attention in recent years because of better thermal stability and rapid crystallization speed because of their modulated multilayer structure. The GeTe/Sb 2 Te 3 SLL structure-based interfacial phase-change memory device showed improved cycle lifetimes and switching speeds. , The main goal currently is to further refine the synthesis of SLL thin films and master the solid-state reaction to attain specific desired properties.…”

Section: Introductionmentioning

confidence: 99%

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

Hui

Luo

et al. 2020

ACS Appl. Electron. Mater.

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In this paper, the superlattice-like (SLL) Ge−Sb−Te combinatorial thin films were prepared by using a high-throughput ion beam sputtering system. The phase evolution and amorphous stability of such films undergoing heat treatment as a function of the coating sequence and modulation period were systematically studied. The composition structure diagram was constructed via an automated process of data obtained by high-throughput synchrotron micro-X-ray diffraction and lab-based micro-X-ray fluorescence. The element distribution and microstructure in the depth direction of the SLL thin films were characterized with time-of-flight secondary ion mass spectrometry and transmission electron microscopy, respectively. These studies showed that the coating sequence has a significant effect on the element distribution in the as-deposited SLL thin films and the structure of the final product upon solid-state reaction. Reducing the modulation period of the SLL thin film improves the stability of the amorphous Ge−Sb−Te phase. This work lays a solid foundation for the rational design of SLL Ge−Sb−Te thin films to improve their performance.

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Superlattice-like SnSb₄/Ge thin films for ultra-high speed phase change memory applications

Abstract: Superlattice-like (SLL) SnSb4/Ge thin films were studied by thermal, electrical and optical methods.

Cited by 22 publications

References 24 publications

Multilayer SnSb₄–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

Multilayer SnSb₄–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

Superlattice‐like Zn ₁₅ Sb ₈₅ /Ga ₃₀ Sb ₇₀ thin films for low power and ultrafast phase change memory application

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

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Superlattice-like SnSb4/Ge thin films for ultra-high speed phase change memory applications

Abstract: Superlattice-like (SLL) SnSb4/Ge thin films were studied by thermal, electrical and optical methods.

Cited by 22 publications

References 24 publications

Multilayer SnSb4–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

Multilayer SnSb4–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

Superlattice‐like Zn 15 Sb 85 /Ga 30 Sb 70 thin films for low power and ultrafast phase change memory application

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

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Product

Resources

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Superlattice-like SnSb₄/Ge thin films for ultra-high speed phase change memory applications

Multilayer SnSb₄–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

Multilayer SnSb₄–SbSe Thin Films for Phase Change Materials Possessing Ultrafast Phase Change Speed and Enhanced Stability

Superlattice‐like Zn ₁₅ Sb ₈₅ /Ga ₃₀ Sb ₇₀ thin films for low power and ultrafast phase change memory application