Superlattice‐like Zn ₁₅ Sb ₈₅ /Ga ₃₀ Sb ₇₀ thin films for low power and ultrafast phase change memory application

Abstract

In this study, the amorphous-to-crystalline transitions of superlattice-like (SLL) Zn 15 Sb 85 /Ga 30 Sb 70 thin films were investigated by in situ film resistance measurement. The thermal stability, resistance and band gap of the SLL Zn 15 Sb 85 /Ga 30 Sb 70 thin film perform well. The data retention temperature for 10 years increases from 177°C of [Zn 15 Sb 85 7/Ga 30 Sb 70 3] to 220°C of [Zn 15 Sb 85 2/Ga 30 Sb 70 8]. The X-ray diffraction patterns show the presence of a large amount of Sb phase in the Zn 15 Sb 85 /Ga 30 Sb 70 thin films, which causes a rapid phase transition. The surface morphology is observed by atomic force microscopy, which indicates that the thickness of Ga 30 Sb 70 in the SLL thin films can affect the grain size and inhibit the crystallisation process. For the Zn 15 Sb 85 /Ga 30 Sb 70 thin films, an ultra-short switching time of around 2 ns is achieved. These results indicate that the SLL Zn 15 Sb 85 /Ga 30 Sb 70 thin films have a promised application in phase change memory.

Sb2Te3/TiTe2‐Heterostructure‐Based Phase Change Memory for Fast Set Speed and Low Reset Energy

“…[16][17][18][19][20] Finally, Sb 2 Te 3 /GeTe, crystalline Sb 2 Te 3 / TiTe 2 , GeTe/C, Ge 8 Sb 92 /Ge, C/Sb, Zn 15 Sb 85 /Ga 30 Sb 70 , and Cr 7 Ge 33 Te 60 /Hf 16 Ge 6 Sb 78 are constructed using two different materials to improve performance using two different properties. [21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] In this work, an amorphous Sb 2 Te 3 /TiTe 2 heterostructure was fabricated using a magnetron sputtering system at room temperature, and a PCM device was fabricated by introducing the Sb 2 Te 3 /TiTe 2 heterostructure. A PCM was fabricated by inserting several nanolayers of TiTe 2 with low thermal conductivity and high electrical conductivity inside the Sb 2 Te 3 layer with fast switching speed operation characteristics.…”

“…[ 16–20 ] Finally, Sb 2 Te 3 /GeTe, crystalline Sb 2 Te 3 /TiTe 2 , GeTe/C, Ge 8 Sb 92 /Ge, C/Sb, Zn 15 Sb 85 /Ga 30 Sb 70 , and Cr 7 Ge 33 Te 60 /Hf 16 Ge 6 Sb 78 are constructed using two different materials to improve performance using two different properties. [ 21–35 ]…”

Subsequent set pulse impacts on set resistance distribution of phase change memory

“…Owing to the difference in temperature and cooling time, the phase change memory cell would take on different states. Low temperature and long cooling time make the phase change material crystallize and form a low resistance state (SET operation), while high temperature and short cooling time make the phase change material form amorphous phase and achieve a high resistance (RESET operation) [6,7].…”