Superluminescent diodes for visible (670nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorber

Semenov, A T; Shidlovski, Vladimir R.; Safin, S.A.; Konyaev, V P; Zverkov, M.V.

doi:10.1049/el:19930354

Cited by 14 publications

(5 citation statements)

References 4 publications

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“…However, most red SLED investigations so far published are still relative to the spectral region between 650 and 700 nm. [3,4] Red light emission at 650 nm is achieved through the use of a strained multi-quantum well (MQW) active region sandwiched between Al(Ga)InP or AlGaAs cladding layers. Simulations of device performance based on the same architecture, but changing the active region composition to achieve emission at shorter wavelength, show that for the current epitaxial design the optimum wavelength for achieving highest luminous flux values is around 635 nm due to the compromise between increasing luminous efficacy and decreasing the internal efficiency of the light emitting active regions.…”

Section: Red Sledsmentioning

confidence: 99%

3‐5: RGB Superluminescent Diodes for AR Micro‐Displays

Rossetti

Castiglia

Malinverni

et al. 2018

Symp Digest of Tech Papers

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Section: Red Sledsmentioning

confidence: 99%

3‐5: RGB Superluminescent Diodes for AR Micro‐Displays

Rossetti

Castiglia

Malinverni

et al. 2018

Symp Digest of Tech Papers

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“…In fact, much of the semiconductor development carried in the 1960s aimed at replicating the ruby laser [6] in a diode form. This second revolution in light-emitting devices led to the demonstration of visible laser diodes [3,7], and in consequence, the demonstration of visible superluminescent diodes (SLD, also referred to as SLED) [8,9].…”

Section: Introductionmentioning

confidence: 99%

Visible‐Light Laser Diodes and Superluminescent Diodes: Characteristics and Applications

Alkhazragi

Holguín‐Lerma

et al. 2021

Digital Encyclopedia of Applied Physics

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Semiconductor light sources technology has seen tremendous strides in recent decades and a rapidly increasing interest in it. The unique advantages and characteristics of this form of light generation include compactness, high efficiency, and reliability. With these recent advancements, light-emitting diodes (LEDs), laser diodes, and superluminescent diodes (SLDs) have become an indispensable part of our homes, factories, and research facilities. In particular, the sensitivity of the human eye to the visible range of the electromagnetic spectrum ranging from 400 to 700 nm and the wavelength-dependence of optical characteristics of materials make visible light required for a plethora of applications ranging from displays for entertainment, to imaging in the medical field, to light-based atomic clocks. While LEDs are the most commonly found type of semiconductor light sources, laser diodes and SLDs are of special interest due to their higher output optical power, spectral purity, and coherence. In this tutorial, we first go over the main unique characteristics of the different types and configurations of visible-light laser diodes and SLDs and their general structures with a focus on their advantages compared to LEDs. We then discuss the applications in which these characteristics are of great interest in the fields of displays, communication, instrumentation, and photonic integrated circuits.

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“…Introduction: Semiconductor superluminescent diode (SLD) is a unique light source that combines a high brightness output beam typical for a laser diode (LD) and a broadband spectral emission of a light emitting diode (LED). SLDs based on AlGaInP heterostructures were introduced over 20 years ago [1]. Since then, they have found a potential use and applications in various fields of technology where a miniature, bright, low-speckle red light source with a short coherence length is required: atomic force microscopy [2], industrial inspection [3], low-coherence illumination [4], pico-projectors [5] and imaging [6].…”

mentioning

confidence: 99%

High‐power single spatial mode superluminescent diodes at 675 nm

et al. 2017

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The optimisation of AlGaInP/GaInPAs MQW heterostructure metal-organic chemical vapour deposition growth as well as the improvements of active channel formation and P-contact deposition technologies is shown to enable a significantly increased external differential efficiency up to 0.5 mW/mA and catastrophic optical damage threshold up to 50 mW of spatially single-mode superluminescent diodes (SLDs) at central wavelength of 675 nm. Life time tests demonstrated high reliability of new SLDs at continuous wave output power of up to 30 mW. The dependencies of spectral and power characteristics of these SLDs on active channel dimensions are presented. To the best of knowledge, these are the most powerful and broadband SLDs at 675 nm.

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Superluminescent diodes for visible (670nm) spectral range based on AlGaInP/GaInP heterostructures with tapered grounded absorber

Cited by 14 publications

References 4 publications

3‐5: RGB Superluminescent Diodes for AR Micro‐Displays

3‐5: RGB Superluminescent Diodes for AR Micro‐Displays

Visible‐Light Laser Diodes and Superluminescent Diodes: Characteristics and Applications

High‐power single spatial mode superluminescent diodes at 675 nm

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