Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100–1230-nm spectral range

Андреева, Е. В.; Zhukov, A. E.; Prokhorov, Vyacheslav V; Ustinov, V. M.; Yakubovich, S D

doi:10.1070/qe2006v036n06abeh013229

Cited by 9 publications

(1 citation statement)

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“…Broad optical spectra using multiple QD layer stacked structures were obtained [30,31]. S. Haffouz et al [32][33][34] reported ultra-wide-bandwidth SLEDs by application of multiple layers of InAs QDs of exactly tuned height from one layer to another as an active region.…”

Section: Introductionmentioning

confidence: 99%

Power improvement in ridge bent waveguide superluminescent light-emitting diodes based on GaN quantum dots

Rokhi¹,

Asgari²

2021

Phys. Scr.

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In this paper, the performance of ridge-waveguide superluminescent light-emitting diodes (SLED) based on nitride quantum dots has been reported. For this purpose, the three-dimensional Schrodinger equation has been solved numerically by the finite volume method for truncated pyramidal quantum dots as active regions taking into account all spontaneous and piezoelectric effects. To calculate the modal gain in the active region, the traveling-wave rate equations model has been used. We solved the traveling-wave equations coupled with the carrier density rate equation to obtain the output power related to the bias current, numerically. The output power is one of the parameters that describe the performance of a superluminescent light-emitting diode. The output power is studied for the SLEDs with different waveguide structural parameters such as the cavity length and radius of curvature. The temperature-dependent of the SLED output power is also investigated. The maximum output power of the SLED increased up to 0.08 W for the cavity with the length of 1200 mm.

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