We explored a path of achieving high quality phase-locking of broad-area laser diode (BALD) array that operates at high electrical to optical power conversion efficiency (PCE). We found that (a) improving single transverse mode control for each individual BALD, (b) employing global Talbot optical coupling among diodes, and (c) enhancing strength of optical coupling among diodes are key factors in achieving high quality phase-locking of high power BALD array. Subsequently, we redesigned and improved a V-shaped external Talbot cavity and employed low reflectivity anti-reflection (AR) coated, low-"smile" BALD array to meet these three important requirements. We demonstrated near-diffraction limit far-field coherent pattern with 19% PCE and 95% visibility. The far-field angle (full-width at half-maximum (FWHM)) of center lobe was measured as 1.5 diffraction angular limited with visibility of 99% for 5A injection current and 1.6 diffraction angular limited with visibility of 95% for 14A injection current. Power scaling of diode array is discussed.