SuperScan&amp;#x2122;: Customized wafer dose patterning

Todorov, S.S.; Sawyer, John W.; Gibilaro, Greg; Hussey, Norm; Gammel, G.; Olden, David; Welsch, Marie; Parisi, N.

doi:10.1109/iit.2014.6940019

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Controlled Dose Nonuniformity1

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Cited by 3 publications

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“…Controlling the beam spot shape is also critical for controlled non uniform doping profiles as explained in more detail elsewhere [3]. By adjusting the residence time of the beam in the scanning algorithm, it is possible to produce deliberately non uniform dose patterns.…”

Section: Controlled Dose Nonuniformitymentioning

confidence: 99%

VIISta 900 3D: Advanced medium current implanter

Sinclair

Olson

Rodier

et al. 2014

2014 20th International Conference on Ion Implantation Technology (IIT)

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The continued advance of semiconductor technology, including the emergence of 3D device architectures, demands ever-increasing precision of dose and angle control in ion implantation. The Varian Semiconductor Equipment business unit of Applied Materials has enhanced the design of the industry's leading medium current implanter to meet the production requirements of advanced technology nodes. Improvements to the implanter architecture include more precise angle control, increased beam utilization, better uniformity and repeatability and longer maintenance intervals. Advanced ion optics allow measurement and control of beam shape.

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Section: Controlled Dose Nonuniformitymentioning

confidence: 99%