1998
DOI: 10.1063/1.122244
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Suppressed diffusion of boron and carbon in carbon-rich silicon

Abstract: Erratum: "Suppressed diffusion of boron and carbon in carbon-rich silicon" [Appl.

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Cited by 134 publications
(73 citation statements)
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“…B7.1.8 Experimentally, the observed carbon diffusion profile in Fig.6 looks qualitatively very close to what has been predicted based on the kick-out mechanism [15, 43,44]. A quantitative fit however requires to take into account also contributions from vacancies via the Frank-Turnbull mechanism [18,35] (Fig.…”
Section: Behavior Of Grown-in Carbon At High Concentrationssupporting
confidence: 55%
“…B7.1.8 Experimentally, the observed carbon diffusion profile in Fig.6 looks qualitatively very close to what has been predicted based on the kick-out mechanism [15, 43,44]. A quantitative fit however requires to take into account also contributions from vacancies via the Frank-Turnbull mechanism [18,35] (Fig.…”
Section: Behavior Of Grown-in Carbon At High Concentrationssupporting
confidence: 55%
“…A SiGe system with carbon incorporation in the base region of a SiGe HBT device leads to influences in both the vertical and lateral transport of the boron in the intrinsic and extrinsic base region [71][72][73][74][75][76][77][78][79][80][81][82][83][84][85][86]. The reduction of the boron diffusion in the SiGe base regions allows for a narrower base width for a given base doping concentration.…”
Section: Silicon Germanium Carbonmentioning
confidence: 99%
“…9 Cluster-ion implantation also has the potential for higher device fabrication throughput since the equivalent dose of single ions (Q equiv ) is related to the dose of cluster ions (Q cluster ) by Q cluster = Q equiv /N cluster , where N cluster is the number of atoms per cluster. 10 In particular, the use of C-cluster ion implantation is of technological interest due the ability of C to slow the diffusion of certain dopants [11][12][13] during post-implantation annealing and enhance charge carrier mobility due to induced strain resulting from substitutional C incorporation during solid-phase epitaxial growth (SPEG). [14][15][16] Thus, the goal of this study is to observe the evolution of damage in C-cluster ionimplanted Si and the subsequent SPEG process.…”
Section: Introductionmentioning
confidence: 99%